Thin Film Adhesion Study in Microelectronic Packaging

1991 ◽  
Vol 239 ◽  
Author(s):  
H. S. Jeong ◽  
Y. Z. Chu ◽  
M. B. Freiler ◽  
C. Durning ◽  
R. C. White
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Microelectronic Packaging ◽  
Elastic Model ◽  
Blister Test ◽  
Linear Elastic ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Cure Temperature

ABSTRACTFracture energy (Ga) of BPDA-PDA polyimide (PI) on modified and unmodified Si surfaces was measured by the “blister” test as a function of final cure temperature. It is proven quantitatively that surface modification prior to thin film deposition enhances adhesion. Metal adhesion to PI was also measured by the same method. Reproducibility of the data was found to be exceptionally good for both cases. The linear elastic model is quite valid for the test of thin film adhesion. Therefore, it is believed that this test is best suited for Ga measurements in the study of thin film adhesion for microelectronic packaging.

A Semi-Quantitative Method for Thin Film Adhesion Measurement

1985 ◽  
Vol 107 (4) ◽  
pp. 472-477 ◽  
Author(s):  
Bond-Yen Ting ◽  
W. O. Winer ◽  
S. Ramalingam
Keyword(s):  
Thin Film ◽  
Shear Stress ◽  
Strain Difference ◽  
Interfacial Shear Stress ◽  
Interfacial Shear ◽  
Film Deposition ◽  
Quantitative Expression ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Film Substrate

Film deposition techniques are used in several applications. In tribology, wear and friction can be changed significantly by depositing a thin film on the contacting surfaces. A vital factor for this application is the adhesion between the film and the substrate. Due to high contact stresses in many tribological applications, high adhesion is required. Measurement of adhesion is therefore important if coated elements are to be used with confidence. A method has been developed for the measurement of adhesion which uses a composite model. This method is presented in this paper. A one-dimensional elastic analysis is sufficient to determine adhesion strength. In this method an interfacial shear stress is generated at the film-to-substrate interface by imposing a strain difference between the film and substrate. This interfacial shear stress is used to evaluate film adhesion. If the film-substrate adhesion is less than the shear stress applied to the interface the film will debond; otherwise, it will remain adhered to the substrate. The analysis developed yields a quantitative expression for the interfacial shear strength. Therefore the adhesion can be quantitatively determined.

One-Dimensional Constrained Blister Test to Measure Thin Film Adhesion

2018 ◽  
Vol 85 (5) ◽  
Author(s):  
Tingting Zhu ◽  
Sinan Müftü ◽  
Kai-tak Wan
Keyword(s):  
Thin Film ◽  
Contact Area ◽  
Interfacial Adhesion ◽  
External Pressure ◽  
Adhesion Energy ◽  
Blister Test ◽  
One Dimensional ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Interfacial Adhesion Energy

A rectangular film is clamped at the opposite ends before being inflated into a blister by an external pressure, p. The bulging film adheres to a constraining plate with distance, w0, above. Increasing pressure expands the contact area of length, 2c. Depressurization shrinks the contact area and ultimate detaches the film. The relation of (p, w0, c) is established for a fixed interfacial adhesion energy.

scholarly journals Revisiting the Constrained Blister Test to Measure Thin Film Adhesion

2017 ◽  
Vol 84 (7) ◽  
Author(s):  
Tingting Zhu ◽  
Guangxu Li ◽  
Sinan Müftü ◽  
Kai-tak Wan
Keyword(s):  
Thin Film ◽  
Solid Mechanics ◽  
Small Strain ◽  
Adhesion Energy ◽  
Deformation Model ◽  
Uniform Pressure ◽  
Blister Test ◽  
Mechanics Model ◽  
Film Adhesion ◽  
Thin Film Adhesion

A thin film is clamped at the periphery to form a circular freestanding diaphragm before a uniform pressure, p, is applied to inflate it into a blister. The bulging membrane adheres to a rigid constraining plate with height, w0, from the nondeformed membrane. Increasing pressure expands the contact circle of radius, c. Depressurization causes shrinkage of the contact and “pull-off” or spontaneous detachment from the plate. Simultaneous measurement of (p, w0, c) allows one to determine the adhesion energy, γ. A solid mechanics model is constructed based on small strain and linear elasticity, which shows a characteristic loading–unloading hysteresis. The results are consistent with a large deformation model in the literature.

Effect of Silane Functional Group on Adhesion of Selected Epoxies for Microelectronic Packaging

2007 ◽  
Vol 4 (1) ◽  
pp. 8-16 ◽  
Author(s):  
M. Jenkins Borrego ◽  
R. H. Dauskardt ◽  
J. C. Bravman
Keyword(s):  
Thin Film ◽  
Fracture Mechanics ◽  
Functional Group ◽  
Silicon Oxide ◽  
Fracture Mechanisms ◽  
Microelectronic Packaging ◽  
Adhesion Promoter ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Cure Reactions

This paper describes experiments designed to evaluate the effect of various silane surface treatments on the thin-film adhesion of epoxies filled with spherical silicon oxide. Fracture mechanics-based methods evaluated adhesion of both filled and unfilled epoxies to silicon oxide. SEM was used to examine fracture surfaces and evaluate fracture mechanisms. Two different epoxies were tested, including one with four components and multiple intermediate cure reactions. It was found that the only silanes that augmented adhesion of the epoxies to silicon oxide were those with functional groups identical to those of the epoxies which take part in the final curing reaction. However, when these silanes were used to coat filler, adhesion of filled epoxies to silicon oxide wafers remained the same or was slightly reduced. In all cases, fracture occurred at or near the epoxy-wafer interface, suggesting that deformation within the epoxy layer was limited. Only one set of specimens, in which the silane was improperly prepared, resulted in augmented epoxy-wafer adhesion facilitated by filler-matrix delamination. In other words, filled epoxy-wafer adhesion increases with decreasing efficacy of silane adhesion promoter treatment.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film

Organic Electronics

2020 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Graduate Studies ◽  
Organic Light

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.

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