On the Use of MÖssbauer Nuclei as Probes of Radiation Induced Effects at Interfaces

1988 ◽  
Vol 129 ◽  
Author(s):  
P. A. Ingemarsson ◽  
T. Ericsson ◽  
G. Possnert ◽  
R. Wappling
Keyword(s):  
Thin Film ◽  
Ion Irradiation ◽  
Film Adhesion ◽  
Conversion Electron M6ssbauer Spectroscopy ◽  
Before And After ◽  
Thin Film Adhesion ◽  
Radiation Induced ◽  
Film Substrate ◽  
Induced Changes ◽  
Thick Layers

ABSTRACTConversion electron M6ssbauer spectroscopy was used as a means of investigating radiation induced changes at thin film interfaces. 25 Å thick layers of 57Fe were evaporated onto substrates of Si,SiO2 and A12O3 andcovered with 150 Å 56Fe. Samples were then subjected to ion irradiation with 20 MeV C14+ to doses ranging from 1012 to 2x 1014 ions/cm2 and subsequently annealed in vacuum at 450 ºC. Mössbauer spectra were recorded before and after each step. The analysis revealed chemical alterations, induced by the ion bombardment, indicative of film-substrate bond formation and reconstruction of residual surface hydrocarbons. The results are interpreted in view of accompanying enhancements in thin film adhesion.

A Semi-Quantitative Method for Thin Film Adhesion Measurement

1985 ◽  
Vol 107 (4) ◽  
pp. 472-477 ◽  
Author(s):  
Bond-Yen Ting ◽  
W. O. Winer ◽  
S. Ramalingam
Keyword(s):  
Thin Film ◽  
Shear Stress ◽  
Strain Difference ◽  
Interfacial Shear Stress ◽  
Interfacial Shear ◽  
Film Deposition ◽  
Quantitative Expression ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Film Substrate

Film deposition techniques are used in several applications. In tribology, wear and friction can be changed significantly by depositing a thin film on the contacting surfaces. A vital factor for this application is the adhesion between the film and the substrate. Due to high contact stresses in many tribological applications, high adhesion is required. Measurement of adhesion is therefore important if coated elements are to be used with confidence. A method has been developed for the measurement of adhesion which uses a composite model. This method is presented in this paper. A one-dimensional elastic analysis is sufficient to determine adhesion strength. In this method an interfacial shear stress is generated at the film-to-substrate interface by imposing a strain difference between the film and substrate. This interfacial shear stress is used to evaluate film adhesion. If the film-substrate adhesion is less than the shear stress applied to the interface the film will debond; otherwise, it will remain adhered to the substrate. The analysis developed yields a quantitative expression for the interfacial shear strength. Therefore the adhesion can be quantitatively determined.

Thin Film Adhesion Study in Microelectronic Packaging

1991 ◽  
Vol 239 ◽  
Author(s):  
H. S. Jeong ◽  
Y. Z. Chu ◽  
M. B. Freiler ◽  
C. Durning ◽  
R. C. White
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Microelectronic Packaging ◽  
Elastic Model ◽  
Blister Test ◽  
Linear Elastic ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Cure Temperature

ABSTRACTFracture energy (Ga) of BPDA-PDA polyimide (PI) on modified and unmodified Si surfaces was measured by the “blister” test as a function of final cure temperature. It is proven quantitatively that surface modification prior to thin film deposition enhances adhesion. Metal adhesion to PI was also measured by the same method. Reproducibility of the data was found to be exceptionally good for both cases. The linear elastic model is quite valid for the test of thin film adhesion. Therefore, it is believed that this test is best suited for Ga measurements in the study of thin film adhesion for microelectronic packaging.

Role of Thin Film Adhesion on Capillary Peeling

Nano Letters ◽  
2021 ◽  
Author(s):  
Jingcheng Ma ◽  
Jin Myung Kim ◽  
Muhammad Jahidul Hoque ◽  
Kamila J. Thompson ◽  
SungWoo Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Adhesion ◽  
Thin Film Adhesion

Thermodynamic Analysis of Physical Vapor Deposited Inorganic Thin Films on Low Temperature Cofired Ceramic

2016 ◽  
Vol 13 (3) ◽  
pp. 95-101 ◽  
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
J. Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Film Adhesion ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high-reliability, high-density microelectronics. The functionality and robustness of rework have been increased through the incorporation of a physical vapor deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for radio frequency (RF) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. Although previous work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e., thermodynamic) parameters in the literature. This article analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxide coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability between pair of materials at specific temperature. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

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