The Effect of Electron Relaxation on Damping of Long-Wavelength Phonons in Metals and Heavily Doped Semiconductors

1984 ◽  
pp. 319-321
Author(s):  
I. P. Ipatova ◽  
A. V. Subashiev ◽  
V. A. Shchukin
Keyword(s):  
Doped Semiconductors ◽  
Long Wavelength ◽  
Electron Relaxation ◽  
Heavily Doped

scholarly journals Free electron nonlinearities in heavily doped semiconductors plasmonics

2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Federico De Luca ◽  
Michele Ortolani ◽  
Cristian Ciracì
Keyword(s):  
Free Electron ◽  
Doped Semiconductors ◽  
Heavily Doped

Percolation in Heavily Doped Semiconductors

1969 ◽  
Vol 183 (3) ◽  
pp. 773-776 ◽  
Author(s):  
D. F. Holcomb ◽  
J. J. Rehr
Keyword(s):  
Doped Semiconductors ◽  
Heavily Doped

Temperature-dependent screening and carrier-carrier scattering in heavily doped semiconductors

1993 ◽  
Vol 48 (23) ◽  
pp. 17121-17127 ◽  
Author(s):  
Kjeld O. Jensen ◽  
J. M. Rorison ◽  
Alison B. Walker
Keyword(s):  
Temperature Dependent ◽  
Doped Semiconductors ◽  
Carrier Scattering ◽  
Heavily Doped

INFLUENCE OF THE COMPOSITION OF THE RADIO-FREQUENCY SPUTTERING ATMOSPHERE ON THE DENSITY OF STATES AND INTERBAND LIGHT ABSORPTION IN THIN Y2O3 FILMS

2021 ◽  
Vol 88 (6) ◽  
pp. 881-886
Author(s):  
O. M. Bordun ◽  
I. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid
Keyword(s):  
Absorption Band ◽  
Density Of States ◽  
Interband Absorption ◽  
Long Wavelength ◽  
Plasma Sputtering ◽  
Radio Frequency Sputtering ◽  
Ion Plasma ◽  
Quasi Classical Approximation ◽  
Heavily Doped ◽  
Interband Light Absorption

The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mixture of these gases is shown to be approximated well by the Urbach empirical rule. Diffractograms of the obtained films were studied and a model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model allows determining the radius of the basic electronic state, the screening radius, and the rootmean-square potential depending on the sputtering atmosphere.

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