Superconducting YBa2Cu3O7-x—Ferroelectric PbZr0.52Ti0.48O3 Heterostructures for a Field Effect Transistor and a Nonvolatile Memory Device

1999 ◽  
pp. 1305-1308
Author(s):  
Masaaki Yamazato ◽  
Alexander M. Grishin ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Effect Transistor

Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device

2008 ◽  
Vol 93 (18) ◽  
pp. 183111 ◽  
Author(s):  
Wenfeng Zhang ◽  
Jiansheng Jie ◽  
Linbao Luo ◽  
Guodong Yuan ◽  
Zhubing He ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Effect Transistor

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

A nonvolatile memory element based on a quaterthiophene field-effect transistor

2005 ◽  
Vol 59 (10) ◽  
pp. 1165-1168 ◽  
Author(s):  
K.N. Narayanan Unni ◽  
Remi de Bettignies ◽  
Sylvie Dabos-Seignon ◽  
Jean-Michel Nunzi
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Element ◽  
Effect Transistor

Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

2013 ◽  
Vol 103 (14) ◽  
pp. 143302 ◽  
Author(s):  
Xiao-Jian She ◽  
Jie Liu ◽  
Jing-Yu Zhang ◽  
Xu Gao ◽  
Sui-Dong Wang
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Storage ◽  
Spatial Profile ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device

2014 ◽  
Vol 61 (7) ◽  
pp. 2364-2370 ◽  
Author(s):  
Yi-Ruei Jhan ◽  
Yung-Chun Wu ◽  
Hsin-Yi Lin ◽  
Min-Feng Hung ◽  
Yu-Hsiang Chen ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory

2010 ◽  
Vol 49 (6) ◽  
pp. 06GG13 ◽  
Author(s):  
Takahiro Ohori ◽  
Satoshi Nagaso ◽  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Hole ◽  
Effect Transistor

A nonvolatile memory element based on an organic field-effect transistor

2004 ◽  
Vol 85 (10) ◽  
pp. 1823-1825 ◽  
Author(s):  
K. N. Narayanan Unni ◽  
Remi de Bettignies ◽  
Sylvie Dabos-Seignon ◽  
Jean-Michel Nunzi
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Element ◽  
Organic Field Effect Transistor ◽  
Effect Transistor
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