scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

2008 ◽  
Vol 1071 ◽  
Author(s):  
Sambit Pattnaik ◽  
Ashish Garg ◽  
Monica Katiyar

AbstractHere, we report fabrication of an organic field effect transistor that can be used as a memory device. We have evaluated inorganic ferroelectric insulator manganese doped barium titanate(BTO), organic poly(vinylidene fluoride trifluoroethylene) P(VDF-TrFE), and their composite. The inorganic and organic ferroelectrics were fabricated using low cost process of spin coating followed by annealing to enhance crystallinity. The ferroelectric phase evolution is assessed by X-ray diffraction, MIM structure is used to study polarization behaviour and leakage current. Finally, OFETs are fabricated using thermal evaporation of 75 nm of pentacene. Gold electrodes of 70 nm were evaporated for the top contact devices keeping W/L=40. The OFET devices, for BTO/P(VDF-TrFE) composite insulator, showed memory effect with shift in threshold voltage of 8.5 ± 1.5V.


2019 ◽  
Vol 7 (14) ◽  
pp. 4259-4266 ◽  
Author(s):  
Zhen Hong ◽  
Jie Zhao ◽  
Kaifa Huang ◽  
Baochang Cheng ◽  
Yanhe Xiao ◽  
...  

For the field effect transistor based on an individual CH3NH3PbI3 (MAPbI3) micro/nanowire, the conductance can accurately be controlled by gate voltage and visible light, showing gate voltage and illumination dual-drive non-volatile memory feature.


2020 ◽  
pp. 148483
Author(s):  
Gyo Sub Lee ◽  
Jae-Seung Jeong ◽  
Min Kyu Yang ◽  
Jin Dong Song ◽  
Young Tack Lee ◽  
...  

2003 ◽  
Vol 216 (1-4) ◽  
pp. 483-489 ◽  
Author(s):  
Yoko Yokoyama ◽  
Xueqing Li ◽  
Kuang Sheng ◽  
Andrei Mihaila ◽  
Tanija Traikovic ◽  
...  

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