Quantum Dot Gate Field-Effect Transistors: Fabrication and Characterization

2013 ◽  
pp. 21-40
Author(s):  
Supriya Karmakar
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
pp. 108079
Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

scholarly journals Quantum dot field effect transistors

2013 ◽  
Vol 16 (9) ◽  
pp. 312-325 ◽  
Author(s):  
Frederik Hetsch ◽  
Ni Zhao ◽  
Stephen V. Kershaw ◽  
Andrey L. Rogach
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

2009 ◽  
Vol 55 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Seung-Yong Lee ◽  
Chan-Oh Jang ◽  
Jung-Hwan Hyung ◽  
Dong-Joo Kim ◽  
Tae-Hong Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Fabrication And Characterization

Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Simulation Models ◽  
Logic Gates ◽  
Behavior Model ◽  
Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

scholarly journals Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 5754-5762 ◽  
Author(s):  
Maria El Abbassi ◽  
Mickael L. Perrin ◽  
Gabriela Borin Barin ◽  
Sara Sangtarash ◽  
Jan Overbeck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

2020 ◽  
Vol 12 (19) ◽  
pp. 21944-21951
Author(s):  
Dae-Kyu Kim ◽  
Dongsun Choi ◽  
Mihyeon Park ◽  
Kwang Seob Jeong ◽  
Jong-Ho Choi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Lead Bromide
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