scholarly journals Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 5754-5762 ◽  
Author(s):  
Maria El Abbassi ◽  
Mickael L. Perrin ◽  
Gabriela Borin Barin ◽  
Sara Sangtarash ◽  
Jan Overbeck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

Graphene NanoRibbon Field Effect Transistors Analysis and Applications

2021 ◽  
pp. 106869
Author(s):  
Tahereh Radsar ◽  
Hassan Khalesi ◽  
Vahid Ghods
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

scholarly journals Quantum dot field effect transistors

2013 ◽  
Vol 16 (9) ◽  
pp. 312-325 ◽  
Author(s):  
Frederik Hetsch ◽  
Ni Zhao ◽  
Stephen V. Kershaw ◽  
Andrey L. Rogach
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 573-577 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4624-4629 ◽  
Author(s):  
Penghui He ◽  
Congbiao Jiang ◽  
Linfeng Lan ◽  
Sheng Sun ◽  
Yizhi Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Light Emitting

Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Simulation Models ◽  
Logic Gates ◽  
Behavior Model ◽  
Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

2019 ◽  
Vol 58 (9) ◽  
pp. 095001
Author(s):  
Jiarui Bao ◽  
Shuyan Hu ◽  
Guangxi Hu ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Graphene Nanoribbon

Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation

2012 ◽  
Vol 112 (9) ◽  
pp. 094505 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Gregory Jolley ◽  
Gilberto A. Umana-Membreno ◽  
Jarek Antoszewski ◽  
Lorenzo Faraone
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Graphene Nanoribbon ◽  
Quantum Mechanical ◽  
Mechanical Simulation
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