Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

2020 ◽  
Vol 12 (19) ◽  
pp. 21944-21951
Author(s):  
Dae-Kyu Kim ◽  
Dongsun Choi ◽  
Mihyeon Park ◽  
Kwang Seob Jeong ◽  
Jong-Ho Choi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Lead Bromide

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4624-4629 ◽  
Author(s):  
Penghui He ◽  
Congbiao Jiang ◽  
Linfeng Lan ◽  
Sheng Sun ◽  
Yizhi Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Light Emitting

scholarly journals Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating

ACS Nano ◽  
2018 ◽  
Vol 12 (12) ◽  
pp. 12805-12813 ◽  
Author(s):  
Artem G. Shulga ◽  
Simon Kahmann ◽  
Dmitry N. Dirin ◽  
Arko Graf ◽  
Jana Zaumseil ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Pbs Quantum Dot

Highly efficient and stable hybrid quantum-dot light-emitting field-effect transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 2439-2449
Author(s):  
Penghui He ◽  
Linfeng Lan ◽  
Caihao Deng ◽  
Jian Wang ◽  
Junbiao Peng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Light Emitting ◽  
Highly Efficient ◽  
Stable Hybrid

A red quantum-dot light-emitting transistor with an EQE of 22.8% and a field-effect mobility of 3.1 cm2 V−1 s−1 is demonstrated.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals Oligofuran–Benzothiadiazole Co-oligomers: Synthesis, Optoelectronic Properties and Reactivity

2021 ◽  
Vol 03 (02) ◽  
pp. 303-308
Author(s):  
Dror Ben Abba Amiel ◽  
Choongik Kim ◽  
Ori Gidron
Keyword(s):  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Light Emitting Diodes ◽  
Organic Field Effect Transistors ◽  
Active Materials ◽  
Light Emitting ◽  
Organic Light ◽  
Donor Acceptor ◽  
Optical Bandgaps

Donor–acceptor–donor (DAD) triad systems are commonly applied as active materials in ambipolar organic field-effect transistors, organic solar cells, and NIR-emitting organic light-emitting diodes. Often, these triads utilize oligothiophenes as donors, whereas their oxygen-containing analogs, oligofurans, are far less studied in this setup. Here we introduce a family of DAD triads in which the donors are oligofurans and the acceptor is benzothiadiazole. In a combined computational and experimental study, we show that these triads display optical bandgaps similar to those of their thiophene analogs, and that a bifuran donor is sufficient to produce emission in the NIR spectral region. The presence of a central acceptor unit increases the photostability of oligofuran-based DAD systems compared with parent oligofurans of the similar length.

scholarly journals Quantum dot field effect transistors

2013 ◽  
Vol 16 (9) ◽  
pp. 312-325 ◽  
Author(s):  
Frederik Hetsch ◽  
Ni Zhao ◽  
Stephen V. Kershaw ◽  
Andrey L. Rogach
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors

All Solution-Processed, Hybrid Light Emitting Field-Effect Transistors

2014 ◽  
Vol 26 (37) ◽  
pp. 6410-6415 ◽  
Author(s):  
Khalid Muhieddine ◽  
Mujeeb Ullah ◽  
Bhola N. Pal ◽  
Paul Burn ◽  
Ebinazar B. Namdas
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Light Emitting
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