High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4624-4629 ◽  
Author(s):  
Penghui He ◽  
Congbiao Jiang ◽  
Linfeng Lan ◽  
Sheng Sun ◽  
Yizhi Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Light Emitting

Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors

2010 ◽  
Vol 20 (20) ◽  
pp. 3457-3465 ◽  
Author(s):  
Michael C. Gwinner ◽  
Yana Vaynzof ◽  
Kulbinder K. Banger ◽  
Peter K. H. Ho ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Light Emitting ◽  
Electron Injector

Dithienocoronene diimide (DTCDI)-Derived Triads for High-Performance Air-Stable, Solution-Processed Balanced Ambipolar Organic Field-Effect Transistors

2021 ◽  
Author(s):  
Huijuan Ran ◽  
Fei Li ◽  
Rong Zheng ◽  
Wenjing Ni ◽  
Zheng Lei ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Stable Solution ◽  
Organic Field Effect Transistors ◽  
Semiconducting Materials ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Semiconducting Materials ◽  
Light Emitting Transistors

Developing ambipolar organic semiconducting materials is essential for complementary-like inverters and light-emitting transistors. In this study, three new dithienocoronenediimide (DTCDI)-derived triads, DTCDI-BT, DTCDI-BBT and DTCDI-BNT, were designed and synthesized, in...

All Solution-Processed, Hybrid Light Emitting Field-Effect Transistors

2014 ◽  
Vol 26 (37) ◽  
pp. 6410-6415 ◽  
Author(s):  
Khalid Muhieddine ◽  
Mujeeb Ullah ◽  
Bhola N. Pal ◽  
Paul Burn ◽  
Ebinazar B. Namdas
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Light Emitting

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Solution Process ◽  
Solution Processed ◽  
Light Emitting

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

High-performance field-effect transistors based on gadolinium doped indium oxide nanofibers and their application in logic gate

2018 ◽  
Vol 112 (21) ◽  
pp. 213501 ◽  
Author(s):  
Chao Wang ◽  
You Meng ◽  
Zidong Guo ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Logic Gate

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

2010 ◽  
Vol 2 (3) ◽  
pp. 626-632 ◽  
Author(s):  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Sunmi Moon ◽  
Taeyoung Choi ◽  
Youngmin Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor
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