Performance and Physical Limits of Heterostructure Field Effect Transistors

ESPRIT ’90 ◽  
1990 ◽  
pp. 851-864
Author(s):  
D. R. Allee ◽  
A. N. Broers ◽  
M. Van Rossum ◽  
S. Borghs ◽  
W. De Raedt ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

scholarly journals Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075212
Author(s):  
Guangyuan Jiang ◽  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Yongxiong Yang ◽  
Yang Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Electron Systems ◽  
Polarization Coulomb Field Scattering ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

1996 ◽  
Vol 17 (7) ◽  
pp. 325-327 ◽  
Author(s):  
M.A. Khan ◽  
Q. Chen ◽  
J.W. Yang ◽  
M.S. Shur ◽  
B.T. Dermott ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

Transient characteristics of gan-based heterostructure field-effect transistors

2003 ◽  
Vol 51 (2) ◽  
pp. 634-642 ◽  
Author(s):  
E. Kohn ◽  
I. Daumiller ◽  
M. Kunze ◽  
M. Neuburger ◽  
M. Seyboth ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transient Characteristics ◽  
Heterostructure Field Effect Transistors
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