Effects of oxygen partial pressure and combined nitrogen on N2-fixation (C2H2) associated with Zea mays and other gramineous species

1986 ◽  
pp. 47-58
Author(s):  
D. A. Zuberer ◽  
D. B. Alexander
Keyword(s):  
Zea Mays ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
N2 Fixation ◽  
Combined Nitrogen ◽  
Gramineous Species

HIGH ALUMINA REFRACTORIES DEGRADATION AS FUNCTION OF OXYGEN PARTIAL PRESSURE IN SOAKING-PITS FURNACES

1986 ◽  
Vol 47 (C1) ◽  
pp. C1-575-C1-580
Author(s):  
E. CRIADO ◽  
F. J. VALLE ◽  
A. CABALLERO
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Alumina

Influence of oxygen partial pressure on phase transition characteristics of VO2thin films prepared by magnetron sputtering

2015 ◽  
Vol 32 (6) ◽  
pp. 645
Author(s):  
Dongping Zhang ◽  
Maodong Zhu ◽  
Kai Yang ◽  
Yi Liu ◽  
Rengui Huang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure

scholarly journals Effect of Hot-Dip Galvanizing Process on Selective Oxidation and Galvanizability of Medium Manganese Steel for Automotive Application

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1265
Author(s):  
Zhang Chen ◽  
Yanlin He ◽  
Weisen Zheng ◽  
Hua Wang ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Surface Oxidation ◽  
Steel Sample ◽  
Dew Point ◽  
Manganese Steel ◽  
Automotive Application ◽  
Stable Phase ◽  
Annealing Atmosphere ◽  
Medium Manganese Steel

A medium manganese steel with 7.5 wt.% Mn for automobile application was galvanized in a continuous Hot Dip Galvanizing (HDG) simulator under different galvanizing conditions. It was shown that the effects of dew point, annealing temperature and annealing atmosphere on the surface oxidation of steel could be comprehensively evaluated by the consideration of oxygen partial pressure P(O2). Although Mn2SiO4 was a thermodynamic stable phase when P(O2) varied from 10−28 to 10−21 atm, it was difficult to form Mn–Si–O composite oxide because there was no enrichment of silicon on the steel surface. So, this oxide was generally formed in the Fe substrate and had little effect on the galvanizability. With the increase in P(O2) above 10−25 atm, MnO particles in the form of the thermodynamic stable phase became coarser and tended to aggregate, which hindered the formation of a continuous inhibition layer, resulting in the defects of bare spots on the galvanized surface of the steel. When the oxygen partial pressure greater than 10−22 atm, film-like MnO layer was formed on the surface of steel sample, which obviously deteriorated the galvanizability. The galvanizability of the steel can be improved by the regulation of oxygen partial pressure; based on this, the reasonable zinc plating process parameters can be developed.

Quantitative evaluation of the oxidation behavior of ZrB2-15 vol.%SiC at a low oxygen partial pressure

Vacuum ◽  
2013 ◽  
Vol 88 ◽  
pp. 98-102 ◽  
Author(s):  
Ai Momozawa ◽  
Rong Tu ◽  
Takashi Goto ◽  
Yuuki Kubota ◽  
Hiroshi Hatta ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Quantitative Evaluation ◽  
Oxidation Behavior ◽  
Low Oxygen

Decrease in Resistance of Ceria Oxygen Sensor Induced by 10 mol% Hf and Zr Doping

2005 ◽  
Vol 888 ◽  
Author(s):  
Noriya Izu ◽  
Woosuck Shin ◽  
Ichiro Matsubara ◽  
Norimitsu Murayama
Keyword(s):  
Solid State ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Solid State Reaction ◽  
Pressure Range ◽  
Oxygen Sensor ◽  
Cubic Phase ◽  
Doped Ceria ◽  
Oxygen Gas ◽  
Resistive Type

ABSTRACTResistive type sensors using 10 mol% Hf-doped ceria and 10 mol% Zr-doped ceria, which had a single cubic phase obtained by solid state reaction, were fabricated and their sensing properties were investigated. The resistance and resistivity of the 10 mol% Hf-doped ceria or 10 mol% Zr-doped ceria were smaller than those of non-doped ceria. In the case of the same temperature of solid state reaction, the resistance and resistivity of the 10 mol% Hf-doped ceria were much smaller than those of the 10 mol% Zr-doped ceria. Furthermore, in the case of the same dopant, the resistance and resistivity of the sensor prepared from the solid state reaction at 1773 K were much smaller than those at 1673 K. The sensor using the 10 mol% Hf-doped ceria could be used as an oxygen gas sensor in wide oxygen partial pressure range and could be applicable to a λ sensor and a universal A/F sensor.

Sign in / Sign up

Export Citation Format

Share Document