Ways for the Removal of the Main Disadvantages of Force Transducers With Semiconductor Strain Gages

1986 ◽  
pp. 283-292 ◽  
Author(s):  
J. Lukas
Keyword(s):  
Strain Gages ◽  
Force Transducers ◽  
Semiconductor Strain

A Design Guideline for Random Excitation Forces Due to Two-Phase Cross Flow in Tube Bundles

2020 ◽  
Vol 142 (6) ◽  
Author(s):  
Colette E. Taylor ◽  
Michel J. Pettigrew
Keyword(s):  
Experimental Data ◽  
Cross Flow ◽  
Random Excitation ◽  
Strain Gages ◽  
Two Phase ◽  
Design Guideline ◽  
Water Steam ◽  
Force Transducers ◽  
Tube Bundles ◽  
Reaction Forces

Abstract This paper re-examines the available experimental data to investigate the random excitation forces that affect tube bundles exposed to two-phase cross flow. Much of the experimental data generated over the past four decades have been gathered in an attempt to understand the parametric dependence of the random two-phase forces. The data include air–water, steam–water and various Freons used in a variety of test sections with either strain gages to measure the tube amplitude or force transducers to measure the reaction forces. A review of previous work in this area finds that some authors claim a strong flow regime dependence while others suggest that this dependence is weak. This work takes a detailed look at this discrepancy and finds that a single design guideline does not adequately bound all flow regimes. As a result, two dimensionless upper bounds are proposed.

Development of High Temperature Semiconductor Strain Gages for Thermal Power Plant Applications

2018 ◽  
Author(s):  
Christopher A. Suprock ◽  
Joseph J. Christian ◽  
Stan T. Rosinski
Keyword(s):  
Power Generation ◽  
High Temperature ◽  
Thermal Power ◽  
Surface Strain ◽  
Strain Gages ◽  
Working Temperature ◽  
Monitoring Applications ◽  
Field Deployment ◽  
Structural Strain ◽  
Semiconductor Strain

This paper discusses a specially developed semiconductor strain cell that allows sensitive measurement of surface strain in environments with temperatures up to 1050F (566C). There is an unmet industry-wide need in the manufacturing and power generation fields for monitoring material mechanics and component degradation at temperatures exceeding the maximum working temperature of traditional strain gage technologies. This technology advances attachment methodology of the semiconductor gage to allow field deployment and a physically reliable interface with structural strain. Measuring strain at these temperatures is useful both in the laboratory and in practical monitoring applications. The technology provides a way to monitor changes in materials exposed to heat and stress and give plant engineers tools to predict and avoid critical failures.

Data-reduction methods for semiconductor strain gages

1964 ◽  
Vol 4 (6) ◽  
pp. 19A-26A
Author(s):  
James Dorsey
Keyword(s):  
Data Reduction ◽  
Strain Gages ◽  
Reduction Methods ◽  
Semiconductor Strain

Torque Sensor For Direct-Drive Manipulators

1987 ◽  
Vol 109 (2) ◽  
pp. 122-127 ◽  
Author(s):  
C. W. deSilva ◽  
T. E. Price ◽  
T. Kanade
Keyword(s):  
Dynamic Performance ◽  
Joint Torque ◽  
Strain Gages ◽  
Torque Sensor ◽  
Direct Drive ◽  
Design Considerations ◽  
Capacity Limit ◽  
Joint Torque Sensor ◽  
Associated Design ◽  
Semiconductor Strain

This paper describes the development of a joint torque sensor for the second direct-drive manipulator at Carnegie-Mellon University (CMU DD Arm II). The approach taken is to develop the sensor using static design considerations and then test it to verify its dynamic performance. Several design considerations applicable to semiconductor strain-gage torque sensors are presented. These are strain capacity limit, nonlinearity, sensitivity, and stiffness specifications. Associated design equations have been developed in the present work. A numerical example is given to illustrate the use of these design considerations. The development of a circular-shaft torque sensor for the CMU DD Arm II, that employs semiconductor strain gages, is described. Typical results from a static calibration test and from step and impulse tests are presented. Test show that the torque sensor performs well under dynamic conditions in a bandwidth of 100 Hz.

Investigation of Blade Vibration of Radial Impellers by Means of Telemetry and Holographic Interferometry

1982 ◽  
Vol 104 (4) ◽  
pp. 838-843 ◽  
Author(s):  
U. Haupt ◽  
M. Rautenberg
Keyword(s):  
Rotating Stall ◽  
Optical Measurements ◽  
High Mass ◽  
Vibration Modes ◽  
Strain Gages ◽  
Flow Conditions ◽  
Blade Vibration ◽  
Vibration Measurements ◽  
Vibration Tests ◽  
Semiconductor Strain

On a high-pressure, high-mass flow, centrifugal compressor blade vibration measurements are carried out to determine the excitation mechanism in various operating ranges. For these experiments semiconductor strain gages were used. For the transmission of the signals, an 8 channel telemetry system has been installed. A research program was started with blade vibration measurements in different operating ranges of the compressor such as rotating stall, surge and flutter ranges and for the case of nonuniform flow conditions. The results of vibration tests with the impeller at rest showed the stress distribution and the strain directions during blade vibration. This information was used for the choice of the strain gage position on the blade. The experimental results were confirmed by a finite-element calculation considering a segment of the impeller with one blade, which determined the different vibration modes. Further, the steady strain distribution of the impeller due to centrifugal force and temperature was calculated. The investigations were completed by optical measurements to find out the vibration modes of the different blades in rotating operation. These tests were carried out by means of a holographic interferometric system with an optical derotator. The results show the various vibration modes of the blade up to a rotational speed of the compressor of 13,000 rpm.

scholarly journals Displacement Sensor Using Diffused Type Semiconductor Strain Gages

1981 ◽  
Vol 17 (9) ◽  
pp. 914-919
Author(s):  
Mitsuo AI ◽  
Michitaka SHIMAZOE ◽  
Motohisa NISHIHARA ◽  
Kazuji YAMADA ◽  
Satoshi SHIMADA ◽  
...  
Keyword(s):  
Displacement Sensor ◽  
Strain Gages ◽  
Type Semiconductor ◽  
Semiconductor Strain

Glass-bonding techniques for semiconductor strain gages

1971 ◽  
Vol 11 (5) ◽  
pp. 235-240 ◽  
Author(s):  
W. A. Leasure ◽  
N. Woodruff ◽  
C. Gravel
Keyword(s):  
Strain Gages ◽  
Semiconductor Strain

Samarium-monosulfide-based semiconductor strain gages for spacecraft-strain transformation

2013 ◽  
Vol 47 (7) ◽  
pp. 601-604 ◽  
Author(s):  
N. M. Volodin ◽  
Yu. N. Mishin ◽  
V. V. Kaminskii ◽  
Yu. V. Zakharov
Keyword(s):  
Strain Gages ◽  
Strain Transformation ◽  
Samarium Monosulfide ◽  
Semiconductor Strain
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