Technology of Amorphous Silicon Thin Films for Solar Cells and Applications to Power Systems

1983 ◽  
pp. 29-35
Author(s):  
D. Girginoudi ◽  
A. Thanailakis ◽  
P. Abarian ◽  
J. G. Antonopoulos ◽  
G. Vachtsevanos ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Power Systems ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells

2003 ◽  
Vol 42 (Part 1, No. 4A) ◽  
pp. 1521-1525 ◽  
Author(s):  
Yoshinori Ide ◽  
Kouich Asakusa ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hot Wire ◽  
Cell Method ◽  
Silicon Thin Films

Electronic Transport Properties of Hydrogenated Amorphous Silicon Thin Films Deposited on Plastic Substrates

2011 ◽  
Vol 221 ◽  
pp. 189-193
Author(s):  
Ying Ge Li ◽  
Dong Xing Du
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Plastic Substrates ◽  
Electronic Transport Properties ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Aiming for potential application in flexible solar cells, electronic transport properties are studied for hydrogenated amorphous silicon thin films on plastic substrates. Intrinsic hydrogenated amorphous silicon layers are deposited on Kapton and Upilex-s polyimide substrates at temperatures of 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. Layers on 75μm and 125 thick Kapton and on 125 Upilex-s substrates are characterized by dark conductivity and activation energy measurements. It can be concluded that the intrinsic layer on 125μm thick Kapton and Upilex-s plastic both have favorable electrical properties and therefore could be employed as substrate material for flexible solar cells.

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters

Irradiation Effect on Al-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Laser Raman Spectroscopy ◽  
Irradiation Effect ◽  
Amorphous Thin Films ◽  
Laser Raman ◽  
Silicon Thin Films ◽  
Al Nanoparticles ◽  
Spot Area ◽  
Fs Laser

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.

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