Electronic Properties of Heavily Doped Trans-Polyacetylene

1991 ◽  
pp. 113-140 ◽  
Author(s):  
S. Stafström
Keyword(s):  
Electronic Properties ◽  
Heavily Doped

On Few Electronic Properties of 2D Heavily Doped MOS2

2019 ◽  
Vol 11 (10) ◽  
pp. 1003-1007
Author(s):  
T. Datta ◽  
U. Roychoudhury ◽  
S. Dutta
Keyword(s):  
Electronic Properties ◽  
Heavily Doped

The Effect of the Doping Profile in Aluminum Back-Surface-Field on the Electronic Properties of c-Si Solar Cells

2010 ◽  
Vol 654-656 ◽  
pp. 1690-1693
Author(s):  
Ji Cheng Zhou ◽  
Yong Min Chen
Keyword(s):  
Solar Cells ◽  
Electronic Properties ◽  
Doping Profile ◽  
Back Surface ◽  
Optimum Thickness ◽  
Atomic Concentration ◽  
Si Solar Cells ◽  
Surface Field ◽  
Maximum Value ◽  
Heavily Doped

The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the Al-BSF is doped heavily. The effects of the dopincg profile in heavily-doped Al-BSF on electronic properties of n+pp+ monocrystalline solar cells were investigated by PC1D. The results show that the electronic properties of solar cells are almost independent of the doping profile of the Al-BSF, but are more or less affected by the BSF profile if the solar cell back surface is passivated well with the BSRV less than ~105cm/s. When the sheet resistance is about between 5 and 30Ω/□, the conversion efficiency can reach the maximum value. And the optimum thickness of Al-BSF is about between 10~15μm.

Electronic properties of a heavily-doped n-type GaAs-Ga1−xAlxAs superlattice

1980 ◽  
Vol 98 (1-3) ◽  
pp. A289
Author(s):  
Shojiro Mori ◽  
Tsuneya Ando
Keyword(s):  
Electronic Properties ◽  
Heavily Doped

Electronic properties of single-crystal diamonds heavily doped with boron

2007 ◽  
Vol 104 (4) ◽  
pp. 586-589 ◽  
Author(s):  
S. G. Buga ◽  
V. D. Blank ◽  
S. A. Terent’ev ◽  
M. S. Kuznetsov ◽  
S. A. Nosukhin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electronic Properties ◽  
Heavily Doped

Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlattice

1980 ◽  
Vol 98 (1-3) ◽  
pp. 101-107 ◽  
Author(s):  
Shojiro Mori ◽  
Tsuneya Ando
Keyword(s):  
Electronic Properties ◽  
Heavily Doped

Electronic properties of intrinsic and heavily doped AlN and GaN

2006 ◽  
Vol 132 ◽  
pp. 105-110
Author(s):  
Ferreira da Silva ◽  
C. Persson
Keyword(s):  
Electronic Properties ◽  
Heavily Doped

Electronic properties of heavily-doped n-type silicon

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 78-80
Author(s):  
A. Selloni ◽  
S.T. Pantelides
Keyword(s):  
Electronic Properties ◽  
Type Silicon ◽  
Heavily Doped

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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