Wafer Temperature Measurement in RTP

1996 ◽  
pp. 103-123 ◽  
Author(s):  
Chuck Schietinger
Keyword(s):  
Temperature Measurement ◽  
Wafer Temperature

scholarly journals In-situ wafer temperature measurement during firing process via inline infrared thermography

2019 ◽  
Author(s):  
Daniel Ourinson ◽  
Gernot Emanuel ◽  
Attila Csordás ◽  
Gunnar Dammaß ◽  
Harald Müller ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Infrared Thermography ◽  
Firing Process ◽  
Wafer Temperature

scholarly journals Nonintrusive wafer temperature measurement usinginsituellipsometry

1991 ◽  
Vol 69 (5) ◽  
pp. 3390-3392 ◽  
Author(s):  
G. M. W. Kroesen ◽  
G. S. Oehrlein ◽  
T. D. Bestwick
Keyword(s):  
Temperature Measurement ◽  
Wafer Temperature

Difference between Wafer Temperature and Thermocouple Reading during rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
T. Borca-Tasciuc ◽  
D. A. Achimov ◽  
G. Chen
Keyword(s):  
Temperature Measurement ◽  
Thermophysical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Simple Analytical Model ◽  
Calibration Standard ◽  
Wafer Temperature ◽  
Thermocouple Reading ◽  
The Difference ◽  
Thermocouple Temperature

ABSTRACTThermocouples are often used as a calibration standard for rapid thermal processing. Although it has been recognized that the thermocouple temperature can be different from the wafer temperature, the magnitude of the temperature difference is difficult to quantify. In this work, we present a simple analytical model to demonstrate the difference between the thermocouple temperature and the true wafer temperature. The results show that a large difference can exist between the thermocouple and the wafer temperature. This is because the optical and thermophysical properties of the thermocouple and the glue material are different from those of the wafer. The model results show that temperature measurement becomes more accurate if fine diameter thermocouple wires with very low emissivity are used.

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

1983 ◽  
Vol 23 ◽  
Author(s):  
S.A. Cohen ◽  
T.O. Sedgwick ◽  
J.L. Speidell
Keyword(s):  
Material Processing ◽  
High Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Temperature Measurements ◽  
Wafer Temperature ◽  
High Temperature Measurement ◽  
Short Time ◽  
Repeated Cycling

ABSTRACTAccurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

Investigation of Lightpipe Volumetric Radiation Effects in RTP Thermometry

2005 ◽  
Author(s):  
D. J. Frankman ◽  
B. W. Webb ◽  
M. R. Jones
Keyword(s):  
Radiative Transfer ◽  
Temperature Measurement ◽  
Temperature Profile ◽  
Radiation Effects ◽  
Measurement Techniques ◽  
Physical Contact ◽  
Spectral Variation ◽  
Wafer Temperature ◽  
Spectral Solution ◽  
Semitransparent Medium

A major obstacle to the widespread implementation of Rapid Thermal Processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers are used to measure wafer temperatures in RTP reactors. While the lightpipe distorts the wafer temperature profile less than temperature measurement techniques which require physical contact, the presence of the lightpipe influences the wafer temperature profile. This paper presents the results of a theoretical study exploring that influence. The coupled radiation/conduction transport in the lightpipe enclosure is solved numerically. Radiation transfer in the system is modeled with varying levels of rigor, ranging from a simple volumetrically non-participating treatment to a full spectral solution of the Radiative Transfer Equation. The results reveal a rather significant effect of the lightpipe on the wafer temperature, which depends on the separation between the lightpipe tip and the wafer. The study illustrates clearly the need to model the lightpipe as a volumetrically participating, semitransparent medium, and further, the importance of accounting for spectral variation of the lightpipe properties in the prediction of the radiative transfer. Finally, two primary mechanisms are identified by which the lightpipe affects the wafer temperature distribution.

Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography

1993 ◽  
Vol 32 (Part 1, No. 2) ◽  
pp. 753-757 ◽  
Author(s):  
Akira Chiba ◽  
Motonobu Futagami ◽  
Koichi Okada
Keyword(s):  
Synchrotron Radiation ◽  
Temperature Measurement ◽  
Wafer Temperature ◽  
X Ray

Investigation of Lightpipe Volumetric Radiation Effects in RTP Thermometry

2005 ◽  
Vol 128 (2) ◽  
pp. 132-141 ◽  
Author(s):  
David J. Frankman ◽  
Brent W. Webb ◽  
Matthew R. Jones
Keyword(s):  
Radiative Transfer ◽  
Temperature Measurement ◽  
Temperature Profile ◽  
Radiation Effects ◽  
Measurement Techniques ◽  
Constant Heat Flux ◽  
Physical Contact ◽  
Spectral Variation ◽  
Wafer Temperature ◽  
Spectral Solution

A major obstacle to the widespread implementation of rapid thermal processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers are used to measure wafer temperatures in RTP reactors. While the lightpipe distorts the wafer temperature profile less than temperature measurement techniques which require physical contact, the presence of the lightpipe influences the wafer temperature profile. This paper presents the results of a theoretical study exploring that influence for an idealized RTP reactor in which the wafer is treated as a nonconducting, opaque, constant-heat-flux surface imaged by the lightpipe. The coupled radiation/conduction transport in the lightpipe measurement enclosure is solved numerically. Radiation transfer in the system is modeled with varying levels of rigor, ranging from a simple volumetrically nonparticipating treatment to a full spectral solution of the radiative transfer equation. The results reveal a rather significant effect of the lightpipe on the wafer temperature, which depends on the separation between the lightpipe tip and the wafer. The study illustrates clearly the need to model the lightpipe as a volumetrically participating, semitransparent medium, and further, the importance of accounting for spectral variation of the lightpipe properties in the prediction of the radiative transfer. Finally, two primary mechanisms are identified by which the lightpipe affects the wafer temperature distribution.

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