EBIT: An Electron Beam Source for the Production and Confinement of Highly Ionized Atoms

1999 ◽  
pp. 429-468 ◽  
Author(s):  
G. Fussmann ◽  
C. Biedermann ◽  
R. Radtke
Keyword(s):  
Electron Beam ◽  
Beam Source

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

An Extended First Collision Source Method for Electron Beam Source Problems

1992 ◽  
Vol 112 (1) ◽  
pp. 1-15 ◽  
Author(s):  
W. L. Filippone ◽  
Jim E. Morel ◽  
Wallace F. Walters
Keyword(s):  
Electron Beam ◽  
Beam Source ◽  
Source Method

Dependence of Sheet Hole Concentrations on Growth Kinetics of a Carbon Doped Electron Beam Heated Graphite Source in GaAs and Al0.3GaD0.7As Films Grown by Solid Source MBE

1995 ◽  
Vol 378 ◽  
Author(s):  
D. L. Sato ◽  
F. J. Szalkowski ◽  
H. P. Lee
Keyword(s):  
Electron Beam ◽  
Surface Segregation ◽  
Carbon Sources ◽  
Growth Conditions ◽  
Growth Surface ◽  
Photoluminescence Intensity ◽  
Beam Source ◽  
Atomic Carbon ◽  
Gaas Films ◽  
Carbon Beam

AbstractA series of carbon delta- and uniformly- doped GaAs and Al0.3Ga0.7As films have been grown by solid source Molecular Beam Epitaxy using an electron-beam heated graphite rod as the dopant source. In contrast to heated filament carbon sources, this electron-beam source produces atomic carbon C1, rather than C3 as the predominant species. The purpose of these experiments was to compare measured sheet carrier concentration of delta-doped GaAs and Al0.3Ga0.7As films under fixed growth conditions and with similar carbon beam fluxes using this electron-beam source. The films were characterized by Hall-effect measurements. The Al0.3Ga0.7As films have consistently higher hole sheet carrier concentrations than GaAs films with similar carbon fluxes. Delta-doped Al0.3Ga0.7 As sheet carrier concentrations of up to 2.2×1013 cm−2 were measured, and thin uniformly-doped Al0.3Ga0.7 As carrier densities were measured up to 5.7×1020 cm−3. The uniformly doped Al0.3Ga0.7As films appear to have higher atomic carbon activation than this delta-doped Al0.3Ga0.7As films. These results can be possibly explained in terms of several concurrent processes involving C-C pairing, stronger Al-C bonding, and dopant surface segregation taking place on the growth surface of the delta-doped layer. Photoluminescence intensity measurements of uniformly-doped GaAs shows degradation at hole concentrations greater then 1018 cm−3 and bandgap contraction at hole densities greater than mid 1018 cm−3.

scholarly journals Design of a high brightness multi-electron-beam source

2008 ◽  
Vol 1 (1) ◽  
pp. 553-563 ◽  
Author(s):  
Yanxia Zhang ◽  
P. Kruit
Keyword(s):  
Electron Beam ◽  
Beam Source ◽  
High Brightness

Modular Electron Beam Source for Thin Film Deposition

1966 ◽  
Vol 37 (10) ◽  
pp. 1421-1422 ◽  
Author(s):  
K. L. Chopra ◽  
M. R. Randlett
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Beam Source

scholarly journals Development and Evaluation of an Electron Beam Source for Microscopy and Its Applications

2010 ◽  
Vol 14 (2) ◽  
pp. 127-130 ◽  
Author(s):  
Seung-Joon Ahn ◽  
Tae-Sik Oh ◽  
Ho-Seob Kim ◽  
Seong-Joon Ahn
Keyword(s):  
Electron Beam ◽  
Beam Source
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