Technological Method of Substratum Metallization by Plasma-Arc Deposition

Author(s):  
A. V. Kostrov ◽  
V. I. Gundorin ◽  
A. V. Strikovsky
2020 ◽  
Vol 57 (1) ◽  
pp. 011601
Author(s):  
尚晓峰 Shang Xiaofeng ◽  
李世硕 Li Shishuo ◽  
王志国 Wang Zhiguo ◽  
赵吉宾 Zhao Jibin ◽  
赵宇辉 Zhao Yuhui ◽  
...  

1992 ◽  
Vol 6 (3) ◽  
pp. 215-218
Author(s):  
O I Steaklov ◽  
A V Alekseev ◽  
S N Platova ◽  
V A Popov ◽  
O A Aleksandrov ◽  
...  

2010 ◽  
Vol 150-151 ◽  
pp. 217-222 ◽  
Author(s):  
Xiao Hong Jiang ◽  
Bing Zhou ◽  
D.G. Piliptsou ◽  
Aliaksandr V. Rogachev

The composite DLC films doped with different content of Cu, Ti unitary and binary metal have been deposited on stainless steel and silicon substrate using DC-magnetic separation and pulse cathode double-excitation source plasma arc deposition technique. Structural and mechanical properties of the films were investigated by Raman spectroscopy, Atomic Force Microscope, micro-sclerometer and surface profilometer. The results indicated that the hardness and internal stress of Cu-DLC films decrease upon incremental content of copper from 0 to15 at.%. More attractively, a simultaneous improvement of the hardness (31GPa) as well as the release of the internal stress (up to 55%) can be achievable for samples with the relative atomic percentages of Ti and Cu contents of 43.6% and 1.56% respectively.


Vacuum ◽  
2018 ◽  
Vol 157 ◽  
pp. 65-68 ◽  
Author(s):  
Bingwen Lu ◽  
Xiufang Cui ◽  
Xiangru Feng ◽  
Meiling Dong ◽  
Yang Li ◽  
...  

Author(s):  
B. Barthelemy ◽  
C. Girold ◽  
C. Delalondre ◽  
B. Paya ◽  
J. M. Baronnet

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