Mechanisms of Laser-Induced Desorption from Insulators and Compound Semiconductors

1987 ◽  
pp. 215-233 ◽  
Author(s):  
Noriaki Itoh
Keyword(s):  
Compound Semiconductors

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

More Se Vacancies in Sb 2 Se 3 under Se‐Rich Conditions: An Abnormal Behavior Induced by Defect‐Correlation in Compensated Compound Semiconductors

Small ◽  
2021 ◽  
pp. 2102429
Author(s):  
Menglin Huang ◽  
Zenghua Cai ◽  
Shanshan Wang ◽  
Xin‐Gao Gong ◽  
Su‐Huai Wei ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Abnormal Behavior

Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies

Vacuum ◽  
2009 ◽  
Vol 84 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. Bozanic ◽  
Z. Majlinger ◽  
M. Petravic ◽  
Q. Gao ◽  
D. Llewellyn ◽  
...  
Keyword(s):  
Molecular Nitrogen ◽  
Compound Semiconductors ◽  
Absorption And Emission

A Standards-Based Method to Determine Elemental Compositions using Energy Dispersive X-Ray Spectrometry for Compound Semiconductors

2012 ◽  
Vol 18 (S2) ◽  
pp. 1046-1047 ◽  
Author(s):  
M. Rathi ◽  
P. Ahrenkiel ◽  
J. Carapella ◽  
M. Wanlass
Keyword(s):  
Compound Semiconductors ◽  
Energy Dispersive ◽  
X Ray ◽  
Elemental Compositions

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Polarity determination in compound semiconductors by channeling: Application to heteroepitaxy

1988 ◽  
Vol 52 (18) ◽  
pp. 1502-1504 ◽  
Author(s):  
A. C. Chami ◽  
E. Ligeon ◽  
R. Danielou ◽  
J. Fontenille
Keyword(s):  
Compound Semiconductors ◽  
Polarity Determination

High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

2002 ◽  
Vol 745 ◽  
Author(s):  
J. Raynien Kwo ◽  
Minghwei Hong
Keyword(s):  
Physical Vapor Deposition ◽  
Gate Dielectrics ◽  
Compound Semiconductors ◽  
State Density ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Materials Integration ◽  
Cmos Scaling ◽  
Atomic Precision ◽  
Critical Issues

ABSTRACTThe ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high κ gate oxide Ga2O3(Gd2O3), and the rare earth oxides Gd2O3 and Y2O3. The epitaxy and the interfaces of Gd2O3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd2O3 and Y2O3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.

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