Analytical Modeling of Surface Potential for Double-Gate MOSFET

Advances in Communication, Devices and Networking - Lecture Notes in Electrical Engineering ◽

10.1007/978-981-13-3450-4_7 ◽

2019 ◽

pp. 55-62 ◽

Cited By ~ 1

Author(s):

Jitendra Prasad ◽

Amit Agarwal ◽

P. C. Pradhan ◽

B. P. Swain

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Double Gate Mosfet

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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Surface Potential Based Analytical Modeling of Double Gate MOSFET with Si and Au Nano-Dots Embedded Gate Dielectric for Non-Volatile Memory Applications

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2788 ◽

2013 ◽

Vol 10 (4) ◽

pp. 906-913 ◽

Cited By ~ 2

Author(s):

Amretashis Sengupta ◽

Chandan Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Double Gate Mosfet ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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Analytical Modeling of the Surface Potential of Triple Material Symmetrical Gate Stack Double Gate (TMGS-DG) MOSFET

International Conference on Recent Advances and Innovations in Engineering (ICRAIE-2014) ◽

10.1109/icraie.2014.6909215 ◽

2014 ◽

Author(s):

Nidhi Singh ◽

Shweta Tripathi

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

Dg Mosfet

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Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model

Advances in Intelligent Systems and Computing - Contemporary Advances in Innovative and Applicable Information Technology ◽

10.1007/978-981-13-1540-4_5 ◽

2018 ◽

pp. 41-47

Author(s):

Krishnendu Roy ◽

Anal Roy Chowdhury ◽

Arpan Deyasi ◽

Angsuman Sarkar

Keyword(s):

Surface Potential ◽

Drain Current ◽

Double Gate ◽

Double Gate Mosfet

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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

Microelectronics Reliability ◽

10.1016/j.microrel.2019.04.019 ◽

2019 ◽

Vol 99 ◽

pp. 87-95

Author(s):

Sriram S.R. ◽

Bindu B.

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

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A surface potential based quasi-ballistic double gate MOSFET model

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2015.7285152 ◽

2015 ◽

Author(s):

Jin Huang ◽

Ganggang Zhang ◽

Xiaoyan Liu ◽

Gang Du

Keyword(s):

Surface Potential ◽

Double Gate ◽

Double Gate Mosfet

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Computing Surface Potential of Double Gate MOSFET for both Free and Doped Carrier Concentrations

2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) ◽

10.1109/iementech.2018.8464756 ◽

2018 ◽

Author(s):

Debarati Chakraborty ◽

Supoma Bhowmick ◽

Arpan Deyasi

Keyword(s):

Surface Potential ◽

Double Gate ◽

Double Gate Mosfet

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Analytical Modeling of a Double Gate MOSFET Considering Source/Drain Lateral Gaussian Doping Profile

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2282632 ◽

2013 ◽

Vol 60 (11) ◽

pp. 3705-3709 ◽

Cited By ~ 32

Author(s):

Ashutosh Nandi ◽

Ashok K. Saxena ◽

Sudeb Dasgupta

Keyword(s):

Analytical Modeling ◽

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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Analytical modeling and comparison of Triple gate MOSFET with Double gate MOSFET

2013 International Conference on Control, Computing, Communication and Materials (ICCCCM) ◽

10.1109/iccccm.2013.6648901 ◽

2013 ◽

Cited By ~ 3

Author(s):

Satya Prakash Pandey ◽

Ravindra Singh Kushwah ◽

Shyam Babu Singh ◽

Shyam Akashe

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Double Gate Mosfet

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Analytical modeling of Double Gate MOSFET using back gate insulator thickness variation

2009 2nd International Workshop on Electron Devices and Semiconductor Technology ◽

10.1109/edst.2009.5166119 ◽

2009 ◽

Author(s):

S. K. Vishvakarma ◽

A. K. Saxena ◽

S. Dasgupta ◽

Tor. A. Fjeldly

Keyword(s):

Analytical Modeling ◽

Gate Insulator ◽

Thickness Variation ◽

Double Gate ◽

Back Gate ◽

Double Gate Mosfet

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