Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model

Author(s):  
Krishnendu Roy ◽  
Anal Roy Chowdhury ◽  
Arpan Deyasi ◽  
Angsuman Sarkar
AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087107 ◽  
Author(s):  
W. Deng ◽  
X. Ma ◽  
J. Huang

2012 ◽  
Vol 59 (12) ◽  
pp. 3292-3298 ◽  
Author(s):  
Zhuojun Chen ◽  
Yongguang Xiao ◽  
Minghua Tang ◽  
Ying Xiong ◽  
Jianqiang Huang ◽  
...  

Author(s):  
Simone Leeuw ◽  
◽  
Viranjay M. Srivastava

The traditional buck regulator provides the steady output voltage with high efficiency and low power dissipation. Various parameters of this regulator can be improved by the placement of Double-Gate (DG) MOSFET. The double-gate MOSFET provides twice the drain current flow, which improves the various parameters of buck regulator structure and inevitably increases the device performance and efficiency. In this research work, these parameters have been analyzed with implemented DG MOSFET buck regulator and realized the total losses 42.676 mW and efficiency 74.208%. This research work has designed a DG MOSFET based buck regulator with the specification of input voltage 12 V, output voltage 3.3 V, maximum output current 40 mA, switching frequency 100 kHz, ripple current of 10%, and ripple voltage of 1%.


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