An EEC Dual Channel Switching Algorithm Based on Engine Thrust Sensitivity

Author(s):  
Xiuqi Wang ◽  
Jie Shen ◽  
Zhongzhi Hu
2012 ◽  
Vol 241-244 ◽  
pp. 2354-2361
Author(s):  
Ling Song ◽  
Tao Shen Li ◽  
Yan Chen

Real-time video transmission demands tremendous bandwidth, throughput and strict delay. For transmitting real-time video in the multi-interface multi-channel Ad hoc, firstly, we applied multi-interface multi-channel extension methods to the AOMDV (Ad-hoc On-demand Multipath Distance Vector) routing protocol, and improved extant channel switching algorithm, called MIMC-AOMDV (Multi-Interface Multi-Channel AOMDV) routing protocol. Secondly, we proposed video streaming delay QoS(Quality of Service) constraint and link-quality metrics, which used the multi interface queue’s total used length to get QMMIMC-AOMDV (Quality metric MIMC -AOMDV) routing protocol. The simulations show that the proposed QMMIMC-AOMDV can reduce the frame delay effectively and raise frame decodable rate and peak signal to noise ratio (PSNR), it is more suitable for real-time video streams.


2004 ◽  
Vol 40 (24) ◽  
pp. 1536 ◽  
Author(s):  
H. Halbritter ◽  
F. Riemenschneider ◽  
B. Kögel ◽  
E. Feldmeier ◽  
P. Meissner

Author(s):  
Carlos Ameixieira ◽  
Jose Matos ◽  
Ricardo Moreira ◽  
Andre Cardote ◽  
Arnaldo Oliveira ◽  
...  

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.


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