Power optimization of binary division based on FPGA

In modern very large scale integrated (VLSI) digital systems, power consumption has become a critical concern of VLSI designers. As size shrinks and density increases in chips, it will be a challenge to design high performance and low-power digital systems. Therefore, VLSI designers are trying to reduce power dissipation in these systems by using power optimization techniques. Different mathematical operations can be found in the architectures of most digital systems. The focus of this paper is division. In comparison to other basic computational operations, division requires more iterations, takes a long time, covers a large area, and consumes more power from the digital system. As a result, the system's design requires high speed and a low-power divider in order to improve its overall performance. This paper focuses on dynamic power dissipation. In order to determine which design consumes the lowest dynamic power, different system designs of digit-recurrence division algorithms, such as restoring division and non-restoring division are suggested. An innovative power-optimization technique, the very hardware descriptions language (VHDL) technique, is utilized to the suggested system designs. The VHDL technique achieved the higher optimization in dynamic power, at 93.66% for non-restoring division with internal-loop iteration, than traditional approaches.

Dynamic Power Management Model for a Wireless Sensor Node

Dynamic power management (DPM) is an efficient technique to design low-power and energy-efficient nodes for wireless sensor networks. This article demonstrates the stochastic behaviour of an input event arrival which is modelled with first-in first-out (FIFO) queue and a single server. An event-driven sensor node is developed based on semi-Markov model. The article investigates the factors affecting the performance of the individual sensor node with detailed analysis considering power consumption and lifetime to be the performance metrics under study. The results demonstrate the impact of the change in event arrival and the probability of change detection on the performance of the node. It is observed that (i) the number of generated events increases with the change in the average value of the distribution which affects the service time in turn resulting in a variation of the server utilization, and that (ii) the increase in the detection probability increases the power consumption decreasing the lifetime of the node.

Low Power VLSI Design Techniques: A Review

Since CMOS technology consumes less power it is a key technology for VLSI circuit design. With technologies reaching the scale of 10 nm, static and dynamic power dissipation in CMOS VLSI circuits are major issues. Dynamic power dissipation is increased due to requirement of high speed and static power dissipation is at much higher side now a days even compared to dynamic power dissipation due to very high gate leakage current and subthreshold leakage. Low power consumption is equally important as speed in many applications since it leads to a reduction in the package cost and extended battery life. This paper surveys contemporary optimization techniques that aims low power dissipation in VLSI circuits.

Junctionless Gate-All-Around Nanowire FET with Asymmetric Spacer for Continued Scaling

In this paper we have performed scaling performance of asymmetric junctionless (JL) SOI nanowire FET at 10 nm gate length (LG). To study the device electrical performance various DC metrics like SS, DIBL, ION/IOFF ratio are performed. Even at 5 nm, the device has good electrical properties with subthreshold swing (SS) = 64 mV/dec, drain induced barrier lowering (DIBL) = 45 mV/V, and switching ratio (ION/IOFF) = 106 shows a higher level of electrostatic integrity. Moreover, to study scaling flexibility towards analog/RF applications various parameters like transconductance (I), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) are determined. Furthermore, the dynamic power (DP) and static power (SP) consumption of the device with scaling is also presented. The findings of the study show that asymmetric JL nanowire FET is one of the scaling possibilities.