Role of Annealing Temperature on Structural Modification of MoO3 for Enhanced Electrochemical Properties

2020 ◽  
pp. 19-26
Author(s):  
Arvind Singh ◽  
Bilal Ahmed ◽  
Saurav K. Ojha ◽  
Animesh K. Ojha
Keyword(s):  
Electrochemical Properties ◽  
Structural Modification ◽  
Annealing Temperature

Role of annealing temperature in tailoring Ce-Doped LaFeO3 features

2021 ◽  
Vol 152 ◽  
pp. 109980
Author(s):  
M.M. Arman ◽  
S.I. El-Dek
Keyword(s):  
Annealing Temperature

Copper ionic liquids: Examining the role of the anion in determining physical and electrochemical properties

2013 ◽  
Vol 396 ◽  
pp. 78-83 ◽  
Author(s):  
Harry D. Pratt ◽  
Jonathan C. Leonard ◽  
Leigh Anna M. Steele ◽  
Chad L. Staiger ◽  
Travis M. Anderson
Keyword(s):  
Ionic Liquids ◽  
Electrochemical Properties

Effect of annealing temperature on structure and electrochemical properties of LiCoO2 cathode thin films

Rare Metals ◽  
2006 ◽  
Vol 25 (6) ◽  
pp. 189-192 ◽  
Author(s):  
Z YANG ◽  
G XING ◽  
J YANG ◽  
C MAO ◽  
J DU
Keyword(s):  
Thin Films ◽  
Electrochemical Properties ◽  
Annealing Temperature ◽  
Licoo2 Cathode

scholarly journals Activity and Stability of (Pr1-xNdx)2NiO4+δas Cathodes for Oxide Fuel Cells: Part VI. The Role of Cu Dopant on the Structure and Electrochemical Properties

2017 ◽  
Vol 164 (10) ◽  
pp. F3131-F3139 ◽  
Author(s):  
Emir Dogdibegovic ◽  
Jingbo Yan ◽  
Qinsheng Cai ◽  
Hwa Young Jung ◽  
Zhengliang Xing ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Electrochemical Properties ◽  
Oxide Fuel ◽  
Cu Dopant

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

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