Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature

2021 ◽  
Vol 21 (1) ◽  
pp. 62-67
Author(s):  
Dipjyoti Das ◽  
Venkateswarlu Gaddam ◽  
Sanghun Jeon
Keyword(s):  
Layer Thickness ◽  
Dielectric Layer ◽  
Annealing Temperature

scholarly journals Polarization switching in Hf0.5Zr0.5O2-dielectric stack: The role of dielectric layer thickness

2021 ◽  
Vol 119 (12) ◽  
pp. 122903
Author(s):  
Atanu K. Saha ◽  
Mengwei Si ◽  
Peide D. Ye ◽  
Sumeet K. Gupta
Keyword(s):  
Layer Thickness ◽  
Dielectric Layer ◽  
Polarization Switching

scholarly journals A Novel Evaluation Method For Particle Deposition Measurement

Open Physics ◽  
2019 ◽  
Vol 17 (1) ◽  
pp. 927-934
Author(s):  
Tao Song ◽  
Chao Liu ◽  
Hengxuan Zhu ◽  
Min Zeng ◽  
Jin Wang
Keyword(s):  
Layer Thickness ◽  
Dielectric Layer ◽  
Gas Turbines ◽  
Particle Deposition ◽  
Optimization Design ◽  
Turbine Blades ◽  
Simulation Software ◽  
Circuit Board ◽  
Normal Operation ◽  
Mass Detection

Abstract Normal operation of gas turbines will be affected by deposition on turbine blades from particles mixed in fuels. This research shows that it is difficult to monitor the mass of the particles deposition on the wall surface in real time. With development of electronic technology, the antenna made of printed circuit board (PCB) has been widely used in many industrial fields. Microstrip antenna is first proposed for monitoring particles deposition to analyse the deposition law of the particles accumulated on the wall. The simulation software Computer Simulation Technology Microwave Studio (CST MWS) 2015 is used to conduct the optimization design of the PCB substrate antenna. It is found that the S11 of vivaldi antenna with arc gradient groove exhibits a monotonous increase with the increase of dielectric layer thickness, and this antenna is highly sensitive to the dielectric layer thickness. Moreover, a cold-state test is carried out by using atomized wax to simulate the deposition of pollutants. A relationship as a four number of times function is found between the capacitance and the deposited mass. These results provide an important reference for the mass detection of the particle deposition on the wall, and this method is suitable for other related engineering fields.

Role of annealing temperature in tailoring Ce-Doped LaFeO3 features

2021 ◽  
Vol 152 ◽  
pp. 109980
Author(s):  
M.M. Arman ◽  
S.I. El-Dek
Keyword(s):  
Annealing Temperature

The role of powder layer thickness on the quality of SLM printed parts

2018 ◽  
Vol 18 (3) ◽  
pp. 948-955 ◽  
Author(s):  
Q.B. Nguyen ◽  
D.N. Luu ◽  
S.M.L. Nai ◽  
Z. Zhu ◽  
Z. Chen ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Powder Layer

Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

2011 ◽  
Vol 109 (7) ◽  
pp. 07C731 ◽  
Author(s):  
Lubna R. Shah ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Ryan Stearrett ◽  
Xiaoming Kou ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Layer Thickness ◽  
Shape Anisotropy ◽  
Tunneling Junction ◽  
Free Layer ◽  
Magnetic Field Sensors ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers

2002 ◽  
Vol 17 (5) ◽  
pp. 1019-1023 ◽  
Author(s):  
S.J. Yang ◽  
T.W. Kang ◽  
T.W. Kim ◽  
K.S. Chung
Keyword(s):  
Layer Thickness ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Nitrogen Atmosphere ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Specific Contact ◽  
Potential Applications ◽  
Increasing Temperature ◽  
P Type

The dependences of the properties of Au/Ni/Si/Ni contacts, deposited on p-GaN epilayers by using electron-beam evaporation, on the Si layer thickness and the annealing temperature were investigated with the goal of producing contacts with low specific resistances. The results of the current–voltage (I–V) curves showed that the lowest specific contact resistance obtained for the Au/Ni/Si/Ni contact with a 1200-Å- thick Si layer on p-type GaN annealed at 700 °C for 1 min in a nitrogen atmosphere was 8.49 × 10-4 Ω cm2. The x-ray diffraction (XRD) measurements on the annealed Au/Ni/Si/Ni/p-GaN/sapphire heterostructure showed that Ni3Si, GaAu, and NiGa layers were formed at the Au/Ni/Si/Ni/p-GaN interfaces. While the intensities corresponding to the Ni3Si layer decreased with increasing annealing temperature above 700 °C, those related to the GaAu and the NiGa layers increased with increasing temperature. These results indicate that the Au/Ni/Si/Ni contacts with 1200-Å-thick Si layers annealed at 700 °C hold promise for potential applications in p-GaN-based optoelectronic devices.

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