Study of Temperature Effect on MOS-HEMT Small-Signal Parameters

2021 ◽  
pp. 255-263
Author(s):  
G. Amarnath ◽  
Manisha Guduri ◽  
A. Vinod ◽  
M. Kavicharan
Keyword(s):  
Temperature Effect ◽  
Small Signal ◽  
Signal Parameters

scholarly journals Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

1999 ◽  
Vol 4 (S1) ◽  
pp. 775-780 ◽  
Author(s):  
Shangli Wu ◽  
Richard T. Webster ◽  
A. F. M. Anwar
Keyword(s):  
High Electron Mobility Transistors ◽  
High Electron ◽  
Small Signal ◽  
Transport Parameters ◽  
Ensemble Monte Carlo ◽  
Electron Mobility Transistors ◽  
Signal Parameters ◽  
Self Consistent ◽  
Consistent Solution ◽  
Gan Hemts

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

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