Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

1994 ◽  
Vol 59 (4) ◽  
pp. 435-439 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
R. W. Michelmann ◽  
C. Maurer ◽  
...  
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Bonding ◽  
Interface Analysis ◽  
Nitride Layers

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Surface Structure ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Silicon ◽  
Nitride Layers

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

2005 ◽  
Vol 86 (1) ◽  
pp. 013108 ◽  
Author(s):  
A. Markwitz ◽  
S. Johnson ◽  
M. Rudolphi ◽  
H. Baumann ◽  
A. Mücklich
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Synthesis of buried silicon nitride layers by rapid thermal annealing

1988 ◽  
Vol 164 ◽  
pp. 429-434 ◽  
Author(s):  
C.M.S. Rauthan ◽  
Ami Chand ◽  
Sudhir Chandra ◽  
G. Bose
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Nitride Layers

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

scholarly journals TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

2017 ◽  
Vol 05 (01) ◽  
pp. 15-25
Author(s):  
Junji Yamanaka ◽  
Shigenori Inoue ◽  
Keisuke Arimoto ◽  
Kiyokazu Nakagawa ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Sign in / Sign up

Export Citation Format

Share Document