Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

scholarly journals Formation of the IR photodetecting structures based on silicon hyperdoped with tellurium

2019 ◽  
Vol 63 (4) ◽  
pp. 430-436
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Irina N. Parkhomenko ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Absorption Coefficient ◽  
Absorption Spectra ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Laser Melting ◽  
Furnace Annealing ◽  
Impurity Atoms

The Si layers doped with Te up to the concentrations of (3–5)1020 cm–3 have been formed via ion implantation and pulsed laser melting. It is found, 70–90 % of the embedded impurity atoms are in substitution states in the silicon lattice. These layers have revealed significant absorption (35–66 %) in the wavelength λ range of 1100–2500 nm. In this case, the absorption coefficient increases with the λ growth. The absorption spectra of the implanted layers after pulsed laser melting, equilibrium furnace annealing, and rapid thermal annealing have been compared. It is shown that equilibrium furnace annealing increases the photon absorption by 4 % in the wavelength range of 1100–2500 nm in comparison with virgin Si. After rapid thermal annealing, the photon absorption in the IR-range increases only by 2 %.

Shallow Junctions for Sub-100 Nm Cmos Technology

2001 ◽  
Vol 669 ◽  
Author(s):  
Veerle Meyssen ◽  
Peter Stolk ◽  
Jeroen van Zijl ◽  
Jurgen van Berkum ◽  
Willem van de Wijgert ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cmos Technology ◽  
Low Energy ◽  
Annealing Conditions ◽  
Delta Doping ◽  
Shallow Junctions ◽  
P Type ◽  
Spike Annealing

ABSTRACTThis paper studies the use of ion implantation and rapid thermal annealing for the fabrication of shallow junctions in sub-100 nm CMOS technology. Spike annealing recipes were optimized on the basis of delta-doping diffusion experiments and shallow junction characteristics. In addition, using GeF2 pre-amorphization implants in combination with low-energy BF2 and spike annealing, p-type junctions depths of 30 nm were obtained with sheet resistances as low as 390 Ω/sq. The combined finetuning of implantation and annealing conditions is expected to enable junction scaling into the 70-nm CMOS technology node.

Rapid Thermal Annealing of III–V Compound Materials

1983 ◽  
Vol 23 ◽  
Author(s):  
M. Kuzuhara ◽  
H. Kohzu ◽  
Y. Takayama
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Furnace Annealing ◽  
Promising Alternative ◽  
Gaas Mesfet ◽  
Annealing Conditions ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Compound Materials

ABSTRACTRapid thermal process utilizing radiation from halogen lamps has been used to post-anneal ion-implanted GaAs. Annealing conditions for Si implants in GaAs are discussed from the view point of applying this technique to GaAs MESFET fabrication. Also, the properties of S and Mg implants in GaAs followed by rapid thermal annealing are comparatively studied with the results after conventional furnace annealing. High electrical activation and minimized implant diffusion for both low and high dose implants are the principal features of this technique. The fabricated MESFET showed much higher transconductance without any anomalous characteristics, indicating this technique to be a promising alternative to conventional furnace annealing.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

scholarly journals TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

2017 ◽  
Vol 05 (01) ◽  
pp. 15-25
Author(s):  
Junji Yamanaka ◽  
Shigenori Inoue ◽  
Keisuke Arimoto ◽  
Kiyokazu Nakagawa ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Rapid thermal annealing of Si1−xGex layers formed by germanium ion implantation

1994 ◽  
Vol 88 (3) ◽  
pp. 247-254 ◽  
Author(s):  
Z. Xia ◽  
J. Saarilahti ◽  
H. Ronkainen ◽  
S. Eränen ◽  
I. Suni ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

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