Sol‐Gel Processing and Characterization of Silica Thin Films for on Chip Humidity Sensors

1996 ◽  
Vol 446 ◽  
Author(s):  
J.R. Kokan ◽  
R.A. Gerhardt

AbstractSilica thin films have been processed via a colloidal sol‐gel method which involves the hydrolyzing of potassium silicate and colloidal silica sol using formamide[l]. The resulting films are highly porous. The processing leaves residual potassium and sodium in the films which can then be removed through leaching in water. The dielectric properties of films which have been leached for twenty minutes are nearly insensitive to humidity. However, partially leached films, or films which have been doped with LiCl, KC1, or NaCl, are highly sensitive to humidity changes. The range of humidities over which these films have high sensitivity can be modified by changing the dopant type or varying the doping level. Films can be made to sense humidities ranging from 20% to 80% reproducibly. These films are ideal for microelectronic applications because they can be processed via dipping as well as spin coating and can also be easily etched.

1996 ◽  
Vol 31 (23) ◽  
pp. 6361-6368 ◽  
Author(s):  
Yu -Fu Kuo ◽  
Tseung -Yuen Tseng

2017 ◽  
Vol 204 (9) ◽  
pp. 1037-1048 ◽  
Author(s):  
Olga Opuchovic ◽  
Serdar Culunlu ◽  
Ayse Uztetik Morkan ◽  
Izzet Amour Morkan ◽  
Daniel Niznansky ◽  
...  

1995 ◽  
Vol 49 (3) ◽  
pp. 187-190 ◽  
Author(s):  
Wang Peiying ◽  
Liu Meidong ◽  
Rao Yunhua ◽  
Zeng Yike ◽  
Ji Nan
Keyword(s):  
Sol Gel ◽  

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4455-4459
Author(s):  
HAOSHUANG GU ◽  
WANQIANG CAO ◽  
JUNMIN XUE ◽  
JOHN WANG

A new system 0.1 BiFeO 3-0.9 SrBi 2 Nb 2 O 9 thin films have been successfully prepared by an ethanolamine-modified sol-gel technique. The precursor solution was synthesized from compounds, Bi(NO 3)3· 5H 2 O , Sr(NO 3)2, Fe(NO 3)3· 9H 2 O and Nb(OC 2 H 5)5 in solution ethylene glycol monomethyl ether. The thin films were deposited on Si single crystal by spinning coating, and heat-treated at temperatures ranging from 400°C to 700°C. Crystallization of thin films occurred at about 500 ~ 600°C and the films exhibit a pure phase of layered perovskite ferroelectric structure. The grain of films is well distributed and the average grain size of the film is about 100nm.


Author(s):  
Nurul Huda Abu Bakar ◽  
Karim Deraman ◽  
R. Hussin ◽  
W. Nurulhuda W. Shamsuri ◽  
Faizal Mansor ◽  
...  

Hydrophobic silica thin films were prepared by sol-gel processing and self-assembly by chemical vapor reaction with Trimethylchlorosilane (TMCS) at low temperature. The sols were divided into Sol A with ethanol, Polyethylene glycol (PEG) and water (H2O) while Sol B were contain precursor of silica Tetraethylorthosilicate (TEOS) hydrolyze with ethanol which was stirred for 15 minutes. HCl was added into the mixture and stirred for another 10 minutes. After deposition on 1 x 1 cm corning glass using spin coating technique (two-step timer), the films were heated at 60˚C for 10 minutes and finally annealed at 150°C for 1 hour. The films were characterized by using Rudolph/Auto EL Ellipsometer, Shimadzu Spectrophotometer, Perkin Elmer Fourier Transform Infrared (FTIR) and Atomic Force Microscope (AFM). The results showed that the films thickness and refractive index were in the range of 105.2 to 112.4 nm and 1.35 to 1.38, respectively. The films were transmitted 70-80% of light (in visible range) with various bondings of C-H, Si-O-Si, Si-C and Si-OH. Surface roughness of the films was increased from 30.6 nm (silica thin film) to 140.5 nm (hydrophobic silica thin films) after modification have been done on the films by using TMCS (heated at 40˚C). It was found that the water contact angles increased when time of reaction increased from 109° to 124°.


2005 ◽  
Vol 491 (1-2) ◽  
pp. 38-42 ◽  
Author(s):  
Kai Yang ◽  
Hongyou Fan ◽  
Kevin J. Malloy ◽  
C. Jeffrey Brinker ◽  
Thomas W. Sigmon

2004 ◽  
Vol 264-268 ◽  
pp. 505-508 ◽  
Author(s):  
M. Özenbaş ◽  
Ö. Kaya
Keyword(s):  
Sol Gel ◽  

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