Influence of temperature on the low- and high-frequency relaxation in a TTB-type ferroelectric relaxor Pb2K(Nb0.1Ta0.9)5O15

1995 ◽  
Vol 30 (22) ◽  
pp. 5819-5824 ◽  
Author(s):  
Z. Lu ◽  
J. -P. Bonnet ◽  
J. Ravez ◽  
P. Hagenmuller
2008 ◽  
Vol 180 (3) ◽  
pp. 1173-1178 ◽  
Author(s):  
Changfeng Tai ◽  
Jicheng Wang ◽  
Michael B. Chancellor ◽  
James R. Roppolo ◽  
William C. de Groat

Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).


2010 ◽  
Vol 25 (1) ◽  
pp. 93-105 ◽  
Author(s):  
Daniel Żarski ◽  
Dariusz Kucharczyk ◽  
Wojciech Sasinowski ◽  
Katarzyna Targońska ◽  
Andrzej Mamcarz

1930 ◽  
Vol 64 (695) ◽  
pp. 570-574 ◽  
Author(s):  
Leo Ferry ◽  
N. I. Shapiro ◽  
B. N. Sidoroff

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