Evaluation of high temperature sulphidation protection provided by amorphous Si/SiO2 coatings produced by ArF excimer laser chemical vapour deposition

1994 ◽  
Vol 13 (8) ◽  
pp. 551-553 ◽  
Author(s):  
J. Pou ◽  
P. Gonz�lez ◽  
D. Fern�ndez ◽  
E. Garc�a ◽  
B. L�on ◽  
...  
Keyword(s):  
High Temperature ◽  
Excimer Laser ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Arf Excimer Laser ◽  
Amorphous Si

Deposition of tantalum oxide films by ArF excimer laser chemical vapour deposition

1993 ◽  
Vol 226 (1) ◽  
pp. 144-148 ◽  
Author(s):  
Yukio Nishimura ◽  
Kyoji Tokunaga ◽  
Masaharu Tsuji
Keyword(s):  
Excimer Laser ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Chemical Vapour ◽  
Arf Excimer Laser

ArF-excimer laser induced chemical vapour deposition of amorphous hydrogenated SiGeC films

2003 ◽  
Vol 208-209 ◽  
pp. 682-687 ◽  
Author(s):  
E. López ◽  
S. Chiussi ◽  
C. Serra ◽  
J. Serra ◽  
P. González ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Arf Excimer Laser

Formation of polycrystalline SiC film by excimer-laser chemical vapour deposition

1992 ◽  
Vol 11 (8) ◽  
pp. 477-478 ◽  
Author(s):  
T. Noda ◽  
H. Suzuki ◽  
H. Araki ◽  
F. Abe ◽  
M. Okada
Keyword(s):  
Excimer Laser ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Sic Film

Silicon consumption in excimer-laser-assisted chemical vapour deposition of tungsten

1991 ◽  
Vol 8 (3) ◽  
pp. 181-188 ◽  
Author(s):  
A.J.P. van Maaren ◽  
P.M. Zagwijn ◽  
W.C. Sinke
Keyword(s):  
Excimer Laser ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

2006 ◽  
Vol 527-529 ◽  
pp. 575-578 ◽  
Author(s):  
Reino Aavikko ◽  
Kimmo Saarinen ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Positron Annihilation ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Vacancy Clusters ◽  
Positron Spectroscopy

Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples.

Improved performances of 1.3μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition

2005 ◽  
Vol 36 (3-6) ◽  
pp. 180-182
Author(s):  
V. Tasco ◽  
B. Potì ◽  
M. De Vittorio ◽  
M. De Giorgi ◽  
R. Cingolani ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic
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