High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition

1987 ◽  
Vol 22 (8) ◽  
pp. 2842-2846 ◽  
Author(s):  
Takashi Goto ◽  
Toshio Hirai
Keyword(s):  
High Temperature ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Amorphous Si3n4

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

2006 ◽  
Vol 527-529 ◽  
pp. 575-578 ◽  
Author(s):  
Reino Aavikko ◽  
Kimmo Saarinen ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Positron Annihilation ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Vacancy Clusters ◽  
Positron Spectroscopy

Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples.

Improved performances of 1.3μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition

2005 ◽  
Vol 36 (3-6) ◽  
pp. 180-182
Author(s):  
V. Tasco ◽  
B. Potì ◽  
M. De Vittorio ◽  
M. De Giorgi ◽  
R. Cingolani ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

2010 ◽  
Vol 645-648 ◽  
pp. 127-130 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Jean Lorenzzi ◽  
Véronique Soulière ◽  
Jacques Dazord ◽  
François Cauwet ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Growth Temperature ◽  
Vapour Deposition ◽  
Defect Density ◽  
Chemical Vapour ◽  
Defect Size ◽  
Homoepitaxial Growth

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

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