Optical study of a pulsed molecular beam

We report on a study of the far-infrared (FIR) magneto-absorption of ZnSe layers epitaxially grown on GaAs by metal-organic vapor-phase epitaxy (MOVPE) or molecular-beam epitaxy (MBE). The Zeeman absorption of the residual donors is observed in undoped and p -type ZnSe layers. A main absorption peak is assigned to a 1s to 2p+ transition of an electron bound to a Cl donor. Polaron pinning effect is included to explain the peak position within the framework of Wigner–Brillouin second order perturbation theory.

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Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy

Optical Materials ◽

10.1016/j.optmat.2005.09.061 ◽

2006 ◽

Vol 28 (6-7) ◽

pp. 775-779 ◽

Cited By ~ 5

Author(s):

Thomas Andreev ◽

Nguyen Quang Liem ◽

Yuji Hori ◽

Mitsuhiro Tanaka ◽

Osamu Oda ◽

...

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Study

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Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs

Applied Physics Letters ◽

10.1063/1.101917 ◽

1989 ◽

Vol 55 (3) ◽

pp. 235-237 ◽

Cited By ~ 25

Author(s):

Le Si Dang ◽

J. Cibert ◽

Y. Gobil ◽

K. Saminadayar ◽

S. Tatarenko

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Study ◽

Residual Strains

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Comparison between atomic layer epitaxy grown and molecular beam epitaxy grown CdTe/MnTe superlattices: a structural and optical study

Superlattices and Microstructures ◽

10.1006/spmi.1996.0352 ◽

1998 ◽

Vol 23 (6) ◽

pp. 1359-1366 ◽

Cited By ~ 3

Author(s):

F. Kany ◽

J.M. Hartmann ◽

H. Ulmer-Tuffigo ◽

H. Mariette

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Optical Study

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Optical study of SiGe films grown with low temperature Si buffer

MRS Proceedings ◽

10.1557/proc-673-p3.11 ◽

2001 ◽

Vol 673 ◽

Author(s):

Y. H. Luo ◽

J. Wan ◽

J. L. Liu ◽

K. L. Wang

Keyword(s):

Raman Spectroscopy ◽

Low Temperature ◽

Molecular Beam ◽

Growth Conditions ◽

Buffer Layers ◽

Threading Dislocation ◽

Optical Study ◽

High Quality ◽

Atomic Force ◽

Threading Dislocation Density

ABSTRACTIn this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.

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Optical study of GaAs1−xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2010.07.011 ◽

2010 ◽

Vol 124 (1) ◽

pp. 558-562 ◽

Cited By ~ 6

Author(s):

H.P. Hsu ◽

J.K. Huang ◽

Y.S. Huang ◽

Y.T. Lin ◽

H.H. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Study ◽

Gas Source ◽

Gaas Substrates

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Defects in Heavily-Doped MBE GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054704 ◽

1982 ◽

Vol 40 ◽

pp. 442-445

Author(s):

C.B. Carter ◽

D.M. DeSimone ◽

T. Griem ◽

C.E.C. Wood

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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