Comparison between atomic layer epitaxy grown and molecular beam epitaxy grown CdTe/MnTe superlattices: a structural and optical study

1998 ◽  
Vol 23 (6) ◽  
pp. 1359-1366 ◽  
Author(s):  
F. Kany ◽  
J.M. Hartmann ◽  
H. Ulmer-Tuffigo ◽  
H. Mariette
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Optical Study

Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study

1998 ◽  
Vol 84 (8) ◽  
pp. 4300-4308 ◽  
Author(s):  
J. M. Hartmann ◽  
F. Kany ◽  
M. Charleux ◽  
Y. Samson ◽  
J. L. Rouvière ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Optical Study

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 1559-1562
Author(s):  
Jörg Pezoldt ◽  
Thomas Kups ◽  
Petia Weih ◽  
Thomas Stauden ◽  
Oliver Ambacher
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Ternary Alloys ◽  
Energy Dispersive ◽  
Atomic Layer Epitaxy ◽  
X Ray ◽  
Edx Analysis

3C-(Si1-xC1-y)Gex+y ternary alloys were grown on 8.5° off axis 4H-SiC substrates by solid source molecular beam epitaxy in a temperature range between 750°C and 950°C. Energy dispersive X-ray (EDX) analysis revealed a decrease of the Ge incorporation versus substrate temperature. This effect is due to the fixed Si/Ge ratio during the epitaxial growth. The Ge distribution within the grown epitaxial layers was found to be nearly homogeneous. The investigations by atomic location by channeling enhanced microanalysis allowed the conclusion that Ge is located mainly at Si lattice sites.

Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001)

Langmuir ◽  
2016 ◽  
Vol 32 (11) ◽  
pp. 2601-2607 ◽  
Author(s):  
M. Sky Driver ◽  
John D. Beatty ◽  
Opeyemi Olanipekun ◽  
Kimberly Reid ◽  
Ashutosh Rath ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Molecular Beam Epitaxy Growth

Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
M. Konagai ◽  
Y. Takemura ◽  
R. Kimura ◽  
N. Teraguchi ◽  
K. Takahashl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Precise Control ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Opening And Closing ◽  
Strained Layer Superlattices ◽  
Constituent Elements

ABSTRACTZnSe, ZnTe and ZnSe-ZnTe strained-layer superlattices (SLS's) have been successfully grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). The ideal ALE growth, i.e., one monolayer per cycle of opening and closing the shutters of the constituent elements, was obtained for ZnSe in the substrate temperature range of 250-350° C. However, for ZnTe, precise control of the Te beam intensity is needed to obtain the ALE growth. Optical properties of the (ZnSe)l-(ZnTe) 1 SLS were evaluated by photoluminesence. ZnSe films were also grown by ALE using metalorganic molecular beam epitaxy (MOMBE-ALE). Diethylzinc (DEZn), diethylsulfur (DES) and diethylselenium (DESe) were used as source gases for Zn, S and Se, respectively. The ALE growth of ZnSe was achieved at substrate temperature between 250 and 300° C which is about 150° C lower than that for the conventional MOMBE.

Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy

1990 ◽  
Vol 29 (Part 2, No. 5) ◽  
pp. L727-L730 ◽  
Author(s):  
Yi-hong Wu ◽  
Takashi Toyoda ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gaas Substrates ◽  
Metalorganic Molecular Beam Epitaxy
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