Positive temperature coefficient of elastic modulus in the high-temperature phase of NiTi

1994 ◽  
Vol 13 (13) ◽  
pp. 955-956 ◽  
Author(s):  
H. Matsumoto
2000 ◽  
Vol 622 ◽  
Author(s):  
Y. S. Lee ◽  
M. K. Han ◽  
Y. I. Choi

ABSTRACTThe breakdown voltages of 6H- and 4H-SiC rectifiers as function of temperature were modeled analytically in both non-reachthrough diode and reachthrough diode. The breakdown voltage was derived by the ionization integral employing accurate hole impact ionization coefficient. The breakdown voltage of SiC rectifiers was increased with increasing temperature and the positive temperature coefficient of breakdown voltage indicates that SiC rectifiers are suitable for high temperature applications. The breakdown voltages of both 6H- and 4H-SiC diodes were increased by M(T)-1/4 in NRDs and M(T)-1/8 in RDs.


1995 ◽  
Vol 5 (7) ◽  
pp. 763-769 ◽  
Author(s):  
S. Rios ◽  
W. Paulus ◽  
A. Cousson ◽  
M. Quilichini ◽  
G. Heger ◽  
...  

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-599-C6-601 ◽  
Author(s):  
T. Wasiutynski ◽  
I. Natkaniec ◽  
A. I. Belushkin

1989 ◽  
Vol 100 (1) ◽  
pp. 135-141 ◽  
Author(s):  
A. I. Baranov ◽  
V. P. Khiznichenko ◽  
L. A. Shuvalov

2021 ◽  
Vol 150 ◽  
pp. 111528
Author(s):  
Ming Liu ◽  
Ehsan Shamil Omaraa ◽  
Jia Qi ◽  
Pegah Haseli ◽  
Jumal Ibrahim ◽  
...  

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