Metalorganic Chemical Vapour Deposition of CuInSe2 From Copper and Indium Diselenocarbamates for Solar Cell Devices

1997 ◽  
Vol 485 ◽  
Author(s):  
John McAleese ◽  
Paul O'Brien ◽  
David J. Otway
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

MOCVD of CuInE2 (Where E = S or Se) and Related Materials for Solar Cell Devices

1999 ◽  
Vol 606 ◽  
Author(s):  
Michael Kemmler ◽  
Michael Lazell ◽  
Paul O'brien ◽  
David J. Otwaya
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CuInE2(where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

scholarly journals Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

2015 ◽  
Vol 33 (4) ◽  
pp. 725-731 ◽  
Author(s):  
K.O. Oyedotun ◽  
E. Ajenifuja ◽  
B. Olofinjana ◽  
B.A. Taleatu ◽  
E. Omotoso ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Lithium Manganese Oxide ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Manganese ◽  
Metal Organic

AbstractLithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD) technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS), UV-Vis spectrophotometry, X-ray diffraction (XRD) spectroscopy, atomic force microscopy (AFM) and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2) and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T) in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

Strain-induced phase transitions in epitaxial NaNbO3thin films grown by metal–organic chemical vapour deposition

2012 ◽  
Vol 45 (5) ◽  
pp. 1015-1023 ◽  
Author(s):  
Jutta Schwarzkopf ◽  
Martin Schmidbauer ◽  
Thilo Remmele ◽  
Andreas Duk ◽  
Albert Kwasniewski ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Structural Phase ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Metal Organic

Epitaxially strained NaNbO3films were grown by liquid-delivery spin metal–organic chemical vapour deposition on several oxide substrates, inducing tensile and compressive lattice strain. High-resolution X-ray diffraction measurements reveal that coherently grown compressively strained NaNbO3films on NdGaO3exhibit the orthorhombiccphase. With increasing in-plane strain a first structural phase transition to the monoclinicrphase and, further on, for films grown under tensile strain on rare earth scandates, a second phase transition to theaaphase, are observed. Our results are in good agreement with the pathway of phase transitions predicted by Diéguez, Rabe & Vanderbilt [Phys. Rev. B, (2005),72, 144101] for NaNbO3films.

Study of GaN films grown by metalorganic chemical vapour deposition

1996 ◽  
Vol 1 ◽  
Author(s):  
W. Van der Stricht ◽  
I. Moerman ◽  
P. Demeester ◽  
J. A. Crawley ◽  
E. J. Thrush
Keyword(s):  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Rotating Disk ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

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