Use of automatic gas analyzer MN5106 on heating and open-hearth furnaces

Metallurgist ◽  
1990 ◽  
Vol 34 (7) ◽  
pp. 149-150
Author(s):  
Yu. P. Blokhin
Keyword(s):  
Open Hearth ◽  
Gas Analyzer

The Practice of the Combined Open Hearth Process of Messrs Bertrand & Thiel

1897 ◽  
Vol 43 (1120supp) ◽  
pp. 17908-17909
Author(s):  
E. Bertrand
Keyword(s):  
Open Hearth

Study on portable motorcycle exhaust gas analyzer

2006 ◽  
Author(s):  
Chen Hongyan ◽  
Cheng Min ◽  
Luo Qining ◽  
Li Ying
Keyword(s):  
Exhaust Gas ◽  
Gas Analyzer

MAGNESIA REFRACTORIES IN BASIC OPEN-HEARTH STEEL FURNACES

1934 ◽  
Vol 17 (1-12) ◽  
pp. 221-235 ◽  
Author(s):  
OLAF ANDERSEN
Keyword(s):  
Open Hearth

High NA spectrograph for a Raman gas analyzer

2020 ◽  
Author(s):  
V. V. Vitkin ◽  
E. E. Popov ◽  
A. A. Kharitonov ◽  
I. N. Kaliteevsky ◽  
V. M. Polyakov
Keyword(s):  
Gas Analyzer

scholarly journals Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3026
Author(s):  
Woo-Jae Kim ◽  
In-Young Bang ◽  
Ji-Hwan Kim ◽  
Yeon-Soo Park ◽  
Hee-Tae Kwon ◽  
...  
Keyword(s):  
Greenhouse Gas ◽  
Silicon Oxide ◽  
Gas Analysis ◽  
Gas Analyzer ◽  
Dc Offset ◽  
Cleaning Performance ◽  
Oxide Etching ◽  
Residual Gas ◽  
Etch Rates ◽  
Very High

The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.

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