Density of localized states and linear specific heat for anderson model of amorphous semiconductors

1982 ◽  
Vol 32 (1) ◽  
pp. 69-75
Author(s):  
J. Mašek ◽  
B. Velický
Keyword(s):  
Specific Heat ◽  
Anderson Model ◽  
Amorphous Semiconductors ◽  
Localized States ◽  
Density Of Localized States

Thermostimulated Conductivity in Amorphous Semiconductors with Non-Exponential Density of Localized States

1988 ◽  
Vol 10 (3) ◽  
pp. 269-274
Author(s):  
Xu Zheng-yi ◽  
Yang Hua-guang ◽  
Gu Ben-yuan
Keyword(s):  
Amorphous Semiconductors ◽  
Localized States ◽  
Density Of Localized States ◽  
Exponential Density

Two frequency light induced absorption and energy density of localized states in amorphous semiconductors

1983 ◽  
Vol 45 (5) ◽  
pp. 441-444
Author(s):  
V.G. Kudryavtsev ◽  
M.I. Ryazanov ◽  
S.N. Taraskin
Keyword(s):  
Energy Density ◽  
Amorphous Semiconductors ◽  
Localized States ◽  
Induced Absorption ◽  
Density Of Localized States

Density of localized states in amorphous semiconductors

1989 ◽  
Vol 67 (4) ◽  
pp. 425-429 ◽  
Author(s):  
Louis de Ladurantaye ◽  
Yves Lépine ◽  
Laurent J. Lewis
Keyword(s):  
Linear Algebra ◽  
Density Of States ◽  
Transport Model ◽  
Amorphous Semiconductors ◽  
Localized States ◽  
Trap Level ◽  
Trap States ◽  
Density Of Localized States ◽  
Multiple Trapping ◽  
Photo Current

A procedure is described for extracting the density of localized states of amorphous semiconductors from transient photo-current measurements. Based on a discretized multiple-trapping transport model, our deconvolution scheme determines, for each trap level, the time–temperature combination such that the activity is a maximum for that level. The density of the trap states is then obtained using linear-algebra techniques. As an example, our procedure is applied to computer-generated signals obtained using an exponential density of states. The deconvoluted distribution of levels is found to be in excellent agreement with the original one.

Transient photodecay measurements as a probe of the density of localized states in amorphous semiconductors

1985 ◽  
Vol 53 (8) ◽  
pp. 637-640 ◽  
Author(s):  
M. Silver ◽  
Eric Snow ◽  
David Adler
Keyword(s):  
Amorphous Semiconductors ◽  
Localized States ◽  
Density Of Localized States

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

A refinement upon the method of evaluating the density of localized states from the field effect

1982 ◽  
Vol 70 (2) ◽  
pp. K181-K183
Author(s):  
J. Gazsó
Keyword(s):  
Field Effect ◽  
Localized States ◽  
Density Of Localized States

HOPPING CONDUCTION IN POLYMERS

1994 ◽  
Vol 08 (07) ◽  
pp. 847-854 ◽  
Author(s):  
Heinz Bässler
Keyword(s):  
Charge Transport ◽  
Carrier Mobility ◽  
Localized States ◽  
Time Dependent ◽  
Hopping Conduction ◽  
Moderate Degree ◽  
Density Of Localized States ◽  
Temporal Features ◽  
Gaussian Density ◽  
Energetic Disorder

The concept of hopping within a Gaussian density of localized states introduced earlier to rationalize charge transport in random organic photoconductors is developed further to account for temporal features of time of flight (TOF) signals. At moderate degree of energetic disorder (σ/kT~3.5…4.5) there is a transport regime intermediate between dispersive and quasi-Gaussian type whose signatures are (i) universal TOF signals that can appear weakly dispersive despite yielding a well defined carrier mobility and (ii) an asymmetric propagator of the carrier packet yielding a time dependent diffusivity.

A MODEL OF BOSE–EINSTEIN CONDENSATION WITH ITINERANT AND LOCALIZED STATES

2005 ◽  
Vol 19 (21) ◽  
pp. 1011-1034
Author(s):  
FUXIANG HAN ◽  
ZHIRU REN ◽  
YUN'E GAO
Keyword(s):  
Critical Temperature ◽  
Anderson Model ◽  
Localized States ◽  
Mean Field Approximation ◽  
Einstein Condensation ◽  
Model Parameters ◽  
Zeroth Order ◽  
Energy Bands ◽  
Bose Einstein Condensation ◽  
Bose Einstein

We propose a model that includes itinerant and localized states to study Bose–Einstein condensation of ultracold atoms in optical lattices (Bose–Anderson model). It is found that the original itinerant and localized states intermix to give rise to a new energy band structure with two quasiparticle energy bands. We have computed the critical temperature Tc of the Bose–Einstein condensation of the quasiparticles in the Bose–Anderson model using our newly developed numerical algorithm and found that Tc increases as na3 (the number density times the lattice constant cubed) increases according to the power law Tc≈18.93(na3)0.59 nK for na3<0.125 and according to the linear relation Tc≈8.75+10.53na3 nK for 1.25<na3<12.5 for the given model parameters. With the self-consistent equations for the condensation fractions obtained within the Bogoliubov mean-field approximation, the effects of the on-site repulsion U on the quasiparticle condensation are investigated. We have found that, for values up to several times the zeroth-order critical temperature, U enhances the zeroth-order condensation fraction at intermediate temperatures and effectively raises the critical temperature, while it slightly suppresses the zeroth-order condensation fraction at very low temperatures.

Dark decay of surface potential: measurement of the density of localized states in highly resistive amorphous silicon alloys

1987 ◽  
Vol 97-98 ◽  
pp. 743-746 ◽  
Author(s):  
Y. Nakayama ◽  
H. Kita ◽  
T. Takahashi ◽  
S. Akita ◽  
T. Kawamura
Keyword(s):  
Amorphous Silicon ◽  
Surface Potential ◽  
Localized States ◽  
Silicon Alloys ◽  
Potential Measurement ◽  
Density Of Localized States ◽  
Dark Decay
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