The influence of the substrate on the Debye-Waller factor of very thin films

AbstractCeO2 thin films were irradiated with 200MeV Xe ions. Effects of the irradiation were studied by using Extended X-ray Absorption Fine Structure (EXAFS) measurement at SPring8 synchrotron radiation facility. EXAFS spectra for the irradiated thin films near the Ce K-edge show that the coordination number for oxygen atoms around Ce atom decreases and that the Ce-O Debye-Waller factor increases by the irradiation. The atomic distance between oxygen atom and Ce atom does not vary within the accuracy of EXAFS measurement. The effect of high density electronic excitation on the structure of CeO2 is discussed.

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Determination of Composition and Linear Lattice Expansion Coefficient in Si1−x Gex/Si Thin Films by Simulation of X-Ray Rocking Curves

MRS Proceedings ◽

10.1557/proc-208-225 ◽

1990 ◽

Vol 208 ◽

Cited By ~ 2

Author(s):

F. Cembali ◽

R. Fabbri ◽

M. Servidori ◽

A. Zani ◽

S. Iyer

Keyword(s):

Thin Films ◽

Expansion Coefficient ◽

Molecular Beam ◽

Depth Distribution ◽

Waller Factor ◽

Lattice Expansion ◽

Linear Lattice ◽

X Ray ◽

Debye Waller Factor

ABSTRACTBy simulation of X-ray rocking curves of Si-Ge alloys grown on Si by molecular beam epitaxy and of Ge implanted samples, the Ge composition, the linear lattice expansion coefficient, the strain depth-distribution and the static Debye-Waller factor in the MBE alloys have been determined.

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The Debye–Waller factor for small cubes and thin films

Acta Crystallographica Section A ◽

10.1107/s0567739468001348 ◽

1968 ◽

Vol 24 (6) ◽

pp. 615-619 ◽

Cited By ~ 6

Author(s):

F. R. L. Schoening

Keyword(s):

Thin Films ◽

Waller Factor ◽

Debye Waller Factor

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Atomic disorder of Li0.5Ni0.5O thin films caused by Li doping: estimation from X-ray Debye–Waller factors

Journal of Applied Crystallography ◽

10.1107/s1600576715020002 ◽

2015 ◽

Vol 48 (6) ◽

pp. 1896-1900 ◽

Cited By ~ 1

Author(s):

Anli Yang ◽

Osami Sakata ◽

Ryosuke Yamauchi ◽

L. S. R. Kumara ◽

Chulho Song ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Debye Model ◽

Waller Factor ◽

Structural Parameter ◽

X Ray Diffraction ◽

Atomic Disorder ◽

X Ray ◽

Li Doping ◽

Debye Waller Factor

Cubic type room-temperature (RT) epitaxial Li0.5Ni0.5O and NiO thin films with [111] orientation grown on ultra-smooth sapphire (0001) substrates were examined using synchrotron-based thin-film X-ray diffraction. The 1\overline{1}1 and 2\overline{2}2 rocking curves including six respective equivalent reflections of the Li0.5Ni0.5O and NiO thin films were recorded. The RTB1factor, which appears in the Debye–Waller factor, of a cubic Li0.5Ni0.5O thin film was estimated to be 1.8 (4) Å2from its 1\overline{1}1 and 2\overline{2}2 reflections, even though the Debye model was originally derived on the basis of one cubic element. The corresponding Debye temperature is 281 (39) K. Furthermore, theB2factor in the pseudo-Debye–Waller factor is proposed. This parameter, which is evaluated using one reflection, was also determined for the Li0.5Ni0.5O thin film by treating Li0.5Ni0.5O and NiO as ideal NaCl crystal structures. A structural parameter for the atomic disorder is introduced and evaluated. This parameter includes the combined effects of thermal vibration, interstitial atoms and defects caused by Li doping using the two Debye–Waller factors.

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Anisotropy of the Debye-Waller factor for the Mössbauer effect in thin films

Physics Letters ◽

10.1016/0031-9163(66)90242-3 ◽

1966 ◽

Vol 23 (1) ◽

pp. 32-33 ◽

Cited By ~ 6

Author(s):

A. Corciovei ◽

E. Rǎdescu

Keyword(s):

Thin Films ◽

Mössbauer Effect ◽

Waller Factor ◽

Mossbauer Effect ◽

Debye Waller Factor

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The effect of temperature on high-resolution TEM image contrast

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100139573 ◽

1995 ◽

Vol 53 ◽

pp. 640-641

Author(s):

T. Geipel ◽

W. Mader ◽

P. Pirouz

Keyword(s):

Form Factor ◽

Inelastic Scattering ◽

Accurate Method ◽

Waller Factor ◽

Effect Of Temperature ◽

Specimen Thickness ◽

Influence Of Temperature ◽

Debye Waller Factor ◽

Influence Of Temperature On ◽

Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

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