Controllable atom-photon entanglement via quantum interference near plasmonic nanostructure

A five-level atomic system is proposed in vicinity of a two-dimensional (2D) plasmonic nanostructure with application in atom-photon entanglement. The behavior of the atom-photon entanglement is discussed with and without a control laser field. The amount of atom-photon entanglement is controlled by the quantum interference created by the plasmonic nanostructure. Thus, the degree of atom-photon entanglement is affected by the atomic distance from the plasmonic nanostructure. In the presence of a control field, maximum entanglement between the atom and its spontaneous emission field is observed.

Controllable Atom-Photon Entanglement Via Quantum Interference Near Plasmonic Nanostructure

A five-level atomic system is proposed in vicinity of a two-dimensional (2D) plasmonic nanostructure with application in atom-photon entanglement. The behavior of the atom-photon entanglement is discussed with and without a control laser field. The amount of atom-photon entanglement is controlled by the quantum interference created by the plasmonic nanostructure. Thus, the degree of atom-photon entanglement is affected by the atomic distance from the plasmonic nanostructure. In the presence of a control field, maximum entanglement between the atom and its spontaneous emission field is observed.

Physical Properties Characterization and Design Comparation of Knee Implant with Ti6Al4V Material

This study aims to describe the results of characterization of physical properties and design comparation of knee implant. the characterization of the material was intended to determine the morphology using SEM, crystal structure using XRD, and chemical composition using XRF. In both designs, the simulation was carried out to get the total deformation value. Simulation is carried out by loading humans walking, jumping, and downstairs in 0-1.1 seconds. While the comparation was focused on comparizing the total deformation value from the human activity of walking, jumping, and downstairs to determine the optimum design. The finding of this study were SEM showed that many parallel strokes on Ti6Al4V, then XRD test showed that the crystallinity peak was at position 40.5189˚ which were indicated by the crystal orientation index [200] reaching 29.35 counts (cts), and Full Width Half Maximum (FWHM) at an angle of 0.288˚ which had an atomic distance along the length of 2.2246 (Å ) with a relative intensity of 100%. And the XRF test showed the highest chemical content of Ti6Al4V was Ti, amounting to 85.12%. This was indicated by the total maximal deformation of the first design 0.23030 micormeter while the second design was 2.109600 micrometer, so the first design was more recommended for implant use. While comparation of total deformation showed that the first design had the lowest maximum average deformation value. The results showed that the first implant design was the optimum design.

Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS2-Doped Mn

The electronic structure and magnetic properties of manganese- (Mn-) doped bilayer (BL) molybdenum disulfide (MoS2) are studied using the density function theory (DFT) plus on-site Hubbard potential correction (U). The results show that the substitution of Mn at the Mo sites of BL MoS2 is energetically favorable under sulfur- (S-) rich regime than Mo. The magnetic interaction between the two manganese (Mn) atoms in BL MoS2 is always ferromagnetic (FM) irrespective of the spatial distance between them, but the strength of ferromagnetic interaction decays with atomic distance. It is also found that two dopants in different layers of BL MoS2 communicate ferromagnetically. In addition to this, the detail investigation of BL MoS2 and its counterpart of monolayer indicates that interlayer interaction in BL MoS2 affects the magnetic interaction in Mn-doped BL MoS2. The calculated Curie temperature is 324, 418, and 381 K for impurity concentration of 4%, 6.25%, and 11.11%, respectively, which is greater than room temperature, and the good dilute limit of dopant concentration is 0–6.25%. Based on the finding, it is proposed that Mn-doped BL MoS2 are promising candidates for two-dimensional (2D) dilute magnetic semiconductor (DMS) for high-temperature spintronics applications.

Effects of Al-dopant at Ni or Co sites in LiNi0.6Co0.3Ti0.1O2 on interlayer slabs (Li–O) and intralayer slabs (TM–O) and their influence on the electrochemical performance of cathode materials

Al substitute into Ni site increase Li–O and reduce M–O atomic distance lead to excellent cycleability with high energy density.

Electronic structure and nearly room-temperature ferromagnetism in V-doped monolayer and bilayer MoS2

The electronic structure, magnetic properties and ferromagnetic transition temperature (Tc) of Vandium (V) doped monolayer (ML) and bilayer (BL) MoS2 are investigated using density function theory (DFT) plus on-site Hubbard potential correction (U). The results show that substitution of V dopant atom at the Mo sites are energetically favorable and magnetic interaction between two dopants in ML and BL MoS2 oscillates from ferromagnetic (FM) to antiferromagnetic (AF) depending on atomic distance between dopants. Our result also shows that a pair of V dopants in different layers of BL MoS2 interacts antiferromagnetically. Moreover, it is obtained that interlayer interaction in BL MoS2 affects the magnetic interaction in V-doped BL MoS2. The calculated ferromagnetic transition temperatures (Tc) value for impurity concentration of 12.5% and 22.22% are 242 and 285 K, respectively, for ML phase. However, for BL phase T[Formula: see text] values are 187 and 256 K for concentration of 6.25% and 11.11%, respectively, these values are closer to room-temperature. Our calculations indicate that, V-doped ML and BL MoS2 are promising candidates for 2D dilute magnetic semiconductors for spintronics applications.

Electromagnetic-matter interactions and devices

This chapter explores electromagnetic-matter interactions from photon to extinction length scales, i.e., nanometer of X-ray and above. Starting with Casimir-Polder effect to understand interactions of metals and dielectrics at near-atomic distance scale, it stretches to larger wavelengths to explore optomechanics and its ability for energy exchange and signal transduction between PHz and GHz. This range is explored with near-quantum sensitivity limits. The chapter also develops the understanding phononic bandgaps, and for photons, it explores the use of energetic coupling for useful devices such as optical tweezers, confocal microscopes and atomic clocks. It also explores miniature accelerators as a frontier area in accelerator physics. Plasmonics—the electromagnetic interaction with electron charge cloud—is explored for propagating and confined conditions together with the approaches’ possible uses. Optoelectronic energy conversion is analyzed in organic and inorganic systems, with their underlying interaction physics through solar cells and its thermodynamic limit, and quantum cascade lasers.