Potential distribution in a gas filled planar diode

1972 ◽  
Vol 22 (5) ◽  
pp. 356-363
Author(s):  
E. Tomková

The effect of the elastic reflexion of slow (< 2 eV) electrons from the anode and the cathode of a planar diode on the potential distribution and the voltage/current characteristic is worked out. Both the 'exponential' and the 'space-charge limited' regions of the characteristic are treated, and for the exponential region some new ξ-η tables have been computed which include the effect if electron reflexion. The characteristic of an actual planar diode is calculated as an example and is compared with the experimentally determined characteristic. It is concluded that the elastic reflexion of slow electrons in a diode with an oxide-coated cathode has a major effect on the voltage/current characteristic and the electric field distribution. The determination of contact potential associated with the diode is also affected.


Author(s):  
M. Pan ◽  
J.M. Cowley

Electron microdiffraction patterns, obtained when a small electron probe with diameter of 10-15 Å is directed to run parallel to and outside a flat crystal surface, are sensitive to the surface nature of the crystals. Dynamical diffraction calculations have shown that most of the experimental observations for a flat (100) face of a MgO crystal, such as the streaking of the central spot in the surface normal direction and (100)-type forbidden reflections etc., could be explained satisfactorily by assuming a modified image potential field outside the crystal surface. However the origin of this extended surface potential remains uncertain. A theoretical analysis by Howie et al suggests that the surface image potential should have a form different from above-mentioned image potential and also be smaller by several orders of magnitude. Nevertheless the surface potential distribution may in practice be modified in various ways, such as by the adsorption of a monolayer of gas molecules.


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