Temperature-programmed desorption (TPD) studies of the deammoniation kinetics of NH4NaY zeolites using a hyperbolic temperature programme

1983 ◽  
Vol 27 (2) ◽  
pp. 353-357 ◽  
Author(s):  
B. Hunger ◽  
J. Hoffmann
1988 ◽  
Vol 131 ◽  
Author(s):  
P. Gupta ◽  
P. A. Coon ◽  
B. G. Koehler ◽  
S. M. George

ABSTRACTThe kinetics of SiCl4 adsorption on Si(lll) 7×7 were studied using laser induced thermal desorption (LITD) and temperature programmed desorption (TPD) techniques. The initial reactive sticking coefficient of SiCl4 on Si(lll) 7×7 was observed to decrease with increasing surface temperature. This decrease was consistent with a precursor-mediated adsorption model. Both LITD and TPD experiments monitored SiCl2 as the main desorption product. These results suggest that SiC12 may be the stable chlorine species on the Si(lll) 7×7 surface.


2020 ◽  
Author(s):  
Stefan R. Kachel ◽  
Pierre Martin Dombrowski ◽  
Tobias Breuer ◽  
Michael Gottfried ◽  
Gregor Witte

Here, we use temperature-programmed desorption (TPD) and Monte Carlo (MC) simulations<br>of TPD traces to characterize the desorption kinetics of pentacene (PEN) and perfluoropentacene (PFP) on MoS2 as a model system for OSCs on TMDCs. We show that the monolayers of PEN and PFP are thermally stabilized compared to their multilayers, which allows to prepare nominal monolayers by selective desorption of multilayers. This stabilization is, however, caused by entropy due to a high molecular mobility rather than an enhanced molecule-substrate bond. Consequently, the nominal monolayers are not densely packed films.


2020 ◽  
Author(s):  
Stefan R. Kachel ◽  
Pierre Martin Dombrowski ◽  
Tobias Breuer ◽  
Michael Gottfried ◽  
Gregor Witte

Here, we use temperature-programmed desorption (TPD) and Monte Carlo (MC) simulations<br>of TPD traces to characterize the desorption kinetics of pentacene (PEN) and perfluoropentacene (PFP) on MoS2 as a model system for OSCs on TMDCs. We show that the monolayers of PEN and PFP are thermally stabilized compared to their multilayers, which allows to prepare nominal monolayers by selective desorption of multilayers. This stabilization is, however, caused by entropy due to a high molecular mobility rather than an enhanced molecule-substrate bond. Consequently, the nominal monolayers are not densely packed films.


2009 ◽  
Vol 113 (43) ◽  
pp. 18480-18486 ◽  
Author(s):  
Inhwa Jung ◽  
Daniel A. Field ◽  
Nicholas J. Clark ◽  
Yanwu Zhu ◽  
Dongxing Yang ◽  
...  

1992 ◽  
Vol 282 ◽  
Author(s):  
Yuemei L. Yang ◽  
Stephen M. Cohen ◽  
Mark P. D'Evelyn

ABSTRACTThe chemistry of coadsorbed H and X (X=C1, Br) on semiconductor surfaces is important in epitaxial growth of silicon from chlorosilanes and of SixGe1−x alloys, in hydrogenating/ halogenating cycles in atomic layer epitaxy, and also provides an interesting model system, yet has received little attention to date. We have investigated the interaction of HC1 and HBr with Ge(100) by temperature-programmed desorption, and find that H2, HCl and HBr each desorb with near-first-order kinetics near 570–590 K and that GeCl2 and GeBr2 desorb with near-second-order kinetics near 675 K and 710 K, respectively. Analysis of the desorption kinetics of H2 and HX provides evidence that adsorbed H and X atoms pair preferentially in a qualitatively similar way as H atoms adsorbed alone on Ge(100)2×1 or Si(100)2×1 and that pairing of H+X occurs in competition with pairing of H+H.


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