Determination of oxide film thickness on metal and ceramic materials using activation analysis and B.E.T. gas adsorption method

1995 ◽  
Vol 192 (1) ◽  
pp. 139-145 ◽  
Author(s):  
W. Görner ◽  
H. Förster
Keyword(s):  
Activation Analysis ◽  
Oxide Film ◽  
Film Thickness ◽  
Gas Adsorption ◽  
Ceramic Materials ◽  
Adsorption Method ◽  
Oxide Film Thickness

Determination of Oxide Film Thickness by Proton Activation

1961 ◽  
Vol 33 (4) ◽  
pp. 583-586 ◽  
Author(s):  
B. A. Thompson
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Proton Activation ◽  
Oxide Film Thickness

Determination of the Oxide Film Thickness on Tin

Nature ◽  
1956 ◽  
Vol 178 (4530) ◽  
pp. 434-435 ◽  
Author(s):  
F. W. SALT ◽  
J. G. N. THOMAS
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Oxide Film Thickness

Determination of anodic oxide film thickness by a luminescence method

1982 ◽  
Vol 11-12 ◽  
pp. 90-99 ◽  
Author(s):  
Lj.D. Zeković ◽  
V.V. Urošević ◽  
B. Jovanić
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Luminescence Method ◽  
Oxide Film Thickness

scholarly journals Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: Effect of irradiation dose and oxide film thickness

2021 ◽  
Vol 118 (21) ◽  
pp. 212101
Author(s):  
Alena Nikolskaya ◽  
Alexey Belov ◽  
Alexey Mikhaylov ◽  
Anton Konakov ◽  
David Tetelbaum ◽  
...  
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Irradiation Dose ◽  
Structure Effect ◽  
Oxide Film Thickness

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

scholarly journals Effect of Silver Oxide Film Thickness on Some Optical Parameter

2014 ◽  
Vol 11 (2) ◽  
pp. 690-694
Author(s):  
Baghdad Science Journal
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Oxide Film ◽  
Film Thickness ◽  
Silver Oxide ◽  
Optical Parameter ◽  
Oxide Film Thickness ◽  
Chemical Spray ◽  
Transmission And Absorption ◽  
Different Thickness

Films of silver oxide of different thickness have been prepared by the chemical spray paralysis. Transmission and absorption spectra have recorded in order to study the effect of increasing thickness on some optical parameter such as reflectance, refractive index , and dielectric constant in its two parts . This study reveals that all these paramters affect by increasing the thickness .

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