Thin-film multilayer magnetic sensors based on the anisotropic magnetoresistive effect

2000 ◽  
Vol 29 (2) ◽  
pp. 137-146 ◽  
Author(s):  
S. I. Kasatkin ◽  
A. M. Murav’ev ◽  
N. P. Vasil’eva ◽  
V. V. Lopatin ◽  
F. F. Popadinets ◽  
...  

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.



2020 ◽  
Vol 25 (5) ◽  
pp. 432-439
Author(s):  
V.V. Amelichev ◽  
◽  
A.A. Reznev ◽  
A.N. Saurov ◽  
◽  
...  

The magnetoresistive transducers of magnetic field have been claimed both for direct and indirect applications in various areas of industry, transport and special equipment. In the paper the special features of used terminology and dimensions in the main parameters of magnetic field magnetoresistive transformers have been revealed. The main results of experimental studies on the developed thin-film magnetoresistive nanostructures (TMN) with even and odd transfer characteristics have been presented. The TMN design on an anisotropic magnetoresistive effect has an odd transfer characteristic and conversion coefficient at the level of 8 mV/V/E. The TMN design based on a giant magnetoresistive effect has an even transfer characteristic and a conversion coefficient at the level of 27 mV/V/E. The results of promising design and technological solutions allowing reaching the values of conversion coefficient of TMN at the level exceeding 100 mV/V/E have been shown. The results of the study of the test spin-tunnel magnetoresistive nanostructure (spin-tunnel TMN) with giant magnetoresistive effect, exceeding 100% have been presented. The novelty of the obtained results has been reflected and the perspective of using highly sensitive TMN and creating the non-volatile MRAM on the basis of thin-film magnetoresistive structure with the spin-tunnel magnetoresistive effect have been determined.



2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.



2016 ◽  
Vol 52 (7) ◽  
pp. 1-4 ◽  
Author(s):  
Saman Nazari Nejad ◽  
Raafat Mansour ◽  
Guo-Xing Miao
Keyword(s):  




1992 ◽  
Vol 30 (1-2) ◽  
pp. 89-100 ◽  
Author(s):  
J.P.J. Groenland ◽  
C.J.M. Eijkel ◽  
J.H.J. Fluitman ◽  
R.M. de Ridder
Keyword(s):  


2006 ◽  
Vol 517 ◽  
pp. 207-211 ◽  
Author(s):  
Mitra Djamal ◽  
Darsikin ◽  
Togar Saragi ◽  
M. Barmawi

This paper describes magnetic sensors that have been developed in the last three years. GMR thin film materials have been successfully developed using unpinned CoFe/Cu/CoFe sandwiches on Si(100) substrate using a home built dc-opposed-target magnetron sputtering (OTMS). The magnetization of the sandwich is measured using hysteresis loop instrument, the Vibrating Sample Magnetometer (VSM). It was found that the phase of GMR was formed, with the MR ratio 15.76%.







2021 ◽  
Author(s):  
Iryna M. Pazukha ◽  
Dmytro I. Saltykov ◽  
Yurii O. Shkurdoda ◽  
Alla I. Saltykova ◽  
Valerii B. Loboda ◽  
...  


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