ИССЛЕДОВАНИЕ МАГНИТОРЕЗИСТИВНЫХ НАНОСТРУКТУР С МАГНИТОСТРИКЦИОННЫМ ЭФФЕКТОМ ДЛЯ УСТРОЙСТВ МАГНИТНОЙ СТРЕЙНТРОНИКИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Silicon Substrates ◽  
Multilayer Nanostructures ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

scholarly journals Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5785
Author(s):  
Dmitry Zhukov ◽  
Vladimir Amelichev ◽  
Sergey Kasatkin ◽  
Dmitry Kostyuk
Keyword(s):  
Magnetron Sputtering ◽  
Silicon Wafer ◽  
Experimental Studies ◽  
Practical Application ◽  
Easy Magnetization ◽  
Mechanical Loads ◽  
Multilayer Nanostructures ◽  
Magnetic Layers ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

The article presents the results of experimental studies of multilayer nanostructures of magnetic straintronics formed by magnetron sputtering on a 100 mm silicon wafer. The object of the study is two types of nanostructures: Ta/FeNiCo/CoFe/Ta and Ta/FeNi/CoFe/Ta, differing in the ratio of magnetic layers. The magnetic and magnetoresistive characteristics of multilayer nanostructures under varying mechanical loads are studied both on a 100 mm wafer and in the form of 4 × 20 mm2 samples of two types. The first, where the axis of easy magnetization is directed along the long side of the sample, and the second, where the axis of easy magnetization is a tilt at 45°. Based on the obtained data, the conclusions about the practical application of these nanostructures in magnetic straintronics elements are drawn.

Microsystems with High Conversion Coefficient of a Weak Magnetic Field Based on Magnetoresistive Nanostructures

2020 ◽  
Vol 25 (5) ◽  
pp. 432-439
Author(s):  
V.V. Amelichev ◽  
◽  
A.A. Reznev ◽  
A.N. Saurov ◽  
◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Conversion Coefficient ◽  
Experimental Studies ◽  
Transfer Characteristic ◽  
Special Equipment ◽  
Giant Magnetoresistive Effect ◽  
Highly Sensitive ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

The magnetoresistive transducers of magnetic field have been claimed both for direct and indirect applications in various areas of industry, transport and special equipment. In the paper the special features of used terminology and dimensions in the main parameters of magnetic field magnetoresistive transformers have been revealed. The main results of experimental studies on the developed thin-film magnetoresistive nanostructures (TMN) with even and odd transfer characteristics have been presented. The TMN design on an anisotropic magnetoresistive effect has an odd transfer characteristic and conversion coefficient at the level of 8 mV/V/E. The TMN design based on a giant magnetoresistive effect has an even transfer characteristic and a conversion coefficient at the level of 27 mV/V/E. The results of promising design and technological solutions allowing reaching the values of conversion coefficient of TMN at the level exceeding 100 mV/V/E have been shown. The results of the study of the test spin-tunnel magnetoresistive nanostructure (spin-tunnel TMN) with giant magnetoresistive effect, exceeding 100% have been presented. The novelty of the obtained results has been reflected and the perspective of using highly sensitive TMN and creating the non-volatile MRAM on the basis of thin-film magnetoresistive structure with the spin-tunnel magnetoresistive effect have been determined.

Thin-film multilayer magnetic sensors based on the anisotropic magnetoresistive effect

2000 ◽  
Vol 29 (2) ◽  
pp. 137-146 ◽  
Author(s):  
S. I. Kasatkin ◽  
A. M. Murav’ev ◽  
N. P. Vasil’eva ◽  
V. V. Lopatin ◽  
F. F. Popadinets ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Sensors ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Synthesis of Cu–Ti thin film multilayers on silicon substrates

2021 ◽  
Vol 44 (1) ◽  
Author(s):  
A Torrisi ◽  
P Horák ◽  
J Vacík ◽  
V Lavrentiev ◽  
A Cannavò ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Substrates

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

Investigation of Nanometric Thin-Film Bismuth Piezoresistors Deposited on Silicon Substrates

2012 ◽  
Vol 1477 ◽  
Author(s):  
Horacio V. Estrada
Keyword(s):  
Thin Film ◽  
Axial Strain ◽  
High Sensitivity ◽  
Metal Alloys ◽  
Silicon Substrates ◽  
Transverse Strain ◽  
Bending Stress ◽  
Pure Bending ◽  
Strain Fields ◽  
Strain Axis

ABSTRACTThin film bismuth piezoresistors, defined on oxidized silicon wafers, are investigated as a function of their orientation for their eventual integration on micro-electro-mechanical (MEMS) microsensors. Bismuth’s piezoresistance (or elasto-resistance) is experimentally investigated to accurately determine its longitudinal and transverse strain sensitivities. Whisker-shaped resistive elements defined on different orientations (from 0o, the beam’s main strain axis, to 90o, perpendicular to that axis) undergo changes of resistance (ΔR), associated with the induced strains on silicon cantilevers beam’s surface when these are mechanically loaded under pure bending stress conditions. For Bi-resistors, the traditional gage factor concept, (ΔR/Ro)/εl, is found to be equal to +16 and +33, for elements oriented along 0 and 90o, respectively, considerably larger than those for metals or metal alloys. These high sensitivity values and the “unusual” positive, higher value for the 90o (perpendicular) resistors can be of considerable interest for microsensors applications. The results of this study enable us to precisely determine the bismuth’s longitudinal and transverse strain sensitivities that are calculated to be equal to +26 and +40.5 respectively. This experimental study is extended to explore the Bi-films’ response to bi-axial strain fields.

Reactive Phase Formation in Thin Films: Evolution of Grain Structure

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsent ◽  
J. Rickman ◽  
M. Dahmstt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Formation ◽  
Experimental Studies ◽  
Grain Structure ◽  
Structure Evolution ◽  
Future Research ◽  
Polycrystalline Materials ◽  
Product Phase ◽  
Nucleation Kinetics

AbstractIt is a well known fact that the properties and performance of polycrystalline materials, including polycrystalline thin films, are strongly affected by the grain structure. Therefore, in treating reactive phase formation in these films, it is (or it will inevitably be) necessary to quantify the grain structure of reactant and product phases and its evolution during the course of the reaction. Theoretical models and the conventional view of thin film reactions, however, have been largely extensions, to small and finite dimensions, of theories and descriptions developed for bulk diffusion couples. These models and descriptions primarily focus on the growth stage and to a much lesser extent on the nucleation stage. Consequently, these models and descriptions are not able to treat the development of product phase grain structure. Recent calorimetric investigations of several thin film systems demonstrate the importance of nucleation kinetics (and hence nucleation barriers) in product phase formation and provide quantitative measures of the thermodynamics and kinetics of formation of the product phases, thereby allowing some degree of comparison with reaction models. Furthermore, microstructural investigations of thin-film reactions demonstrate the non-planarity of the growth front and highlight the role of reactant-phase grain boundaries. In this paper, a summary of these experimental studies and recent theoretical treatments, which combine nucleation and growth in an integrated manner, is presented, with particular emphasis on the Nb/Al system. These experiments and models lead to a new view of reactive phase formation and grain structure evolution as one in which the latter is an integral part of the former. Based on this view, directions for future research are discussed.

Micro-capacitor with vertically grown silver nanowires and bismuth ferric oxide composite structures on silicon substrates

2016 ◽  
Vol 51 (7) ◽  
pp. 965-969 ◽  
Author(s):  
Daniel Choi ◽  
Boo Hyun An ◽  
Mariam Mansouri ◽  
Dima Ali ◽  
Malathe Khalil ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Aluminum Oxide ◽  
Ferric Oxide ◽  
Silver Nanowires ◽  
Silicon Substrates ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Oxide Composite ◽  
Aluminum Oxide Film

We have designed and demonstrated a complementary metal-oxide-semiconductor compatible process for fabricating high capacitance micro-capacitors based on vertically grown silver nanowires on silicon substrates. Array of silver nanowires with high-aspect ratio were electrochemically grown in the pores of anodized aluminum oxide film, which was pre-formed through anodization of aluminum thin film deposited on titanium/silicon oxide/silicon substrates. High dielectric bismuth ferric oxide layer was electrodeposited to fill the gap between silver nanowires after anodized aluminum oxide film was removed. It was found that the micro-capacitor based on the silver nanowires/bismuth ferric oxide composite film possessed higher capacitance by approximately one order of magnitude from the COMSOL simulation results from the flat Ag thin-film capacitor and the silver nanowire capacitor.

EXPERIMENTAL STUDIES OF THE INFLUENCE OF THIN-FILM COATINGS ON THE RESISTANCE OF THE TOOL

2020 ◽  
Vol 5 ◽  
pp. 55-60
Author(s):  
G.V. BARSUKOV ◽  
A.V. KIRICHEK ◽  
K.F. SELEMENEV ◽  
E.M. SELEMENEVA
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Cutting Fluids ◽  
Adhesive Interaction ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Rigid Contact

The article deals with the problems of increasing the efficiency of centrifugal processing with a rigid contact. It is shown that when materials with different properties interact, it is energetically "advantageous" to have a discontinuous contact between interacting elements of the surfaces of the tool and the part. It has been established that epilating the working surfaces of the tool significantly changes the nature of the resistance to adhesive interaction, the effectiveness of which is significantly increased when using cutting fluids (lubricating and cooling technological media).

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