Microsystems with High Conversion Coefficient of a Weak Magnetic Field Based on Magnetoresistive Nanostructures

2020 ◽  
Vol 25 (5) ◽  
pp. 432-439
Author(s):  
V.V. Amelichev ◽  
◽  
A.A. Reznev ◽  
A.N. Saurov ◽  
◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Conversion Coefficient ◽  
Experimental Studies ◽  
Transfer Characteristic ◽  
Special Equipment ◽  
Giant Magnetoresistive Effect ◽  
Highly Sensitive ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

The magnetoresistive transducers of magnetic field have been claimed both for direct and indirect applications in various areas of industry, transport and special equipment. In the paper the special features of used terminology and dimensions in the main parameters of magnetic field magnetoresistive transformers have been revealed. The main results of experimental studies on the developed thin-film magnetoresistive nanostructures (TMN) with even and odd transfer characteristics have been presented. The TMN design on an anisotropic magnetoresistive effect has an odd transfer characteristic and conversion coefficient at the level of 8 mV/V/E. The TMN design based on a giant magnetoresistive effect has an even transfer characteristic and a conversion coefficient at the level of 27 mV/V/E. The results of promising design and technological solutions allowing reaching the values of conversion coefficient of TMN at the level exceeding 100 mV/V/E have been shown. The results of the study of the test spin-tunnel magnetoresistive nanostructure (spin-tunnel TMN) with giant magnetoresistive effect, exceeding 100% have been presented. The novelty of the obtained results has been reflected and the perspective of using highly sensitive TMN and creating the non-volatile MRAM on the basis of thin-film magnetoresistive structure with the spin-tunnel magnetoresistive effect have been determined.

ИССЛЕДОВАНИЕ МАГНИТОРЕЗИСТИВНЫХ НАНОСТРУКТУР С МАГНИТОСТРИКЦИОННЫМ ЭФФЕКТОМ ДЛЯ УСТРОЙСТВ МАГНИТНОЙ СТРЕЙНТРОНИКИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Silicon Substrates ◽  
Multilayer Nanostructures ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

scholarly journals Highly Sensitive Surface Acoustic Wave Magnetic Field Sensor Using Multilayered TbCo2/FeCo Thin Film

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 902 ◽  
Author(s):  
Aurelien Mazzamurro ◽  
Abdelkrim Talbi ◽  
Yannick Dusch ◽  
Omar Elmazria ◽  
Philippe Pernod ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Magnetic Field Sensor ◽  
Nanostructured Thin Film ◽  
Highly Sensitive ◽  
Magnetic Model ◽  
Field Sensor

Over the last decades, the use of Surface Acoustic Waves (SAW) has emerged as a promising technology in many applications such as filters, signal processing but also sensors. We report the fabrication and the characterization of a SAW delay line magnetic field sensor using uniaxial multi-layered 14×[TbCo2(3.7nm)/FeCo(4nm)] nanostructured thin film deposited on Y36° Lithium Niobate (Figure 1a). The sensor shows an interesting dependency to a tunable bias magnetic field with different orientations relative to the easy axis. The obtained results are well explained using an equivalent piezo-magnetic model described in a previous work.

Highly Sensitive Thin-Film Magnetic Field Sensor Meandering Coplanar Line

2015 ◽  
Vol 51 (11) ◽  
pp. 1-3 ◽  
Author(s):  
H. Uetake ◽  
T. Kawakami ◽  
K. Moriya ◽  
S. Yabukami ◽  
T. Ozawa
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Magnetic Field Sensor ◽  
Coplanar Line ◽  
Highly Sensitive ◽  
Field Sensor

scholarly journals Гигантский магниторезистивный эффект в отражении микроволн от сверхрешеток (CoFe)/Cu

2021 ◽  
Vol 91 (2) ◽  
pp. 308
Author(s):  
А.Б. Ринкевич ◽  
Е.А. Кузнецов ◽  
Д.В. Перов ◽  
М.А. Миляев
Keyword(s):  
Magnetic Field ◽  
Reflection Coefficient ◽  
Field Dependence ◽  
Giant Magnetoresistance ◽  
Magnetic Field Dependence ◽  
Wave Reflection ◽  
Frequency Range ◽  
Giant Magnetoresistive Effect ◽  
The Magnetic Field ◽  
Magnetoresistive Effect

Experimental study of microwave giant magnetoresistive effect in wave reflection has been carried out in frequency range from 26 to 38 GHz. The magnitude of the effect is obtained and its magnetic field dependence is defined. The experiments are carried out with (CoFe)/Cu superlattices, which have giant magnetoresistance. Calculations of the magnetic field dependence of microwave reflection coefficient are fulfilled. The measured values of reflection coefficient variations are found to be greater than the calculated ones. This difference is connected with approximation within which the superlattice is replaced by the uniform metallic plate in calculations. A frequency dependence of microwave giant magnetoresistive effect in reflection is also observed. This dependence is explained by the influence of the waveguide impedance where the sample is placed in measurements.

scholarly journals Ферромагнитных резонанс в прохождении электромагнитных волн через металлические сверхрешетки

2021 ◽  
Vol 91 (6) ◽  
pp. 995
Author(s):  
А.Б. Ринкевич ◽  
Е.А. Кузнецов ◽  
Д.В. Перов ◽  
М.А. Миляев ◽  
Л.Н. Ромашев
Keyword(s):  
Magnetic Field ◽  
Transmission Coefficient ◽  
Field Dependence ◽  
Ferromagnetic Resonance ◽  
Resonance Line ◽  
Magnetic Field Dependence ◽  
Microwave Transmission ◽  
Giant Magnetoresistive Effect ◽  
Magnetoresistive Effect ◽  
Dispersion Line

Variations of microwave transmission coefficient through Fe films and Fe/Cr superlattices have been studied caused by ferromagnetic resonance at frequencies from 26 to 38 GHz. The shape of resonance line is described in frames of the model where its asymmetry is obtained by adding of lorenzian dispersion line to the absorption line. It has been shown that the shape of resonance line for superlattices with continuous Fe and Cr layers and also for Fe films is well described in this model. For the superlattices with thin Fe or Cr layers only qualitative agreement is observed. In magnetic fields less than the field of ferromagnetic resonance, essential distinction is observed of experimental magnetic field dependence of transmission coefficient comparing to the model, for superlattices which have giant magnetoresistive effect.

Thin-film multilayer magnetic sensors based on the anisotropic magnetoresistive effect

2000 ◽  
Vol 29 (2) ◽  
pp. 137-146 ◽  
Author(s):  
S. I. Kasatkin ◽  
A. M. Murav’ev ◽  
N. P. Vasil’eva ◽  
V. V. Lopatin ◽  
F. F. Popadinets ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Sensors ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

scholarly journals Magnetoresistive Properties of Multilayer Film Systems Based on Permalloy and Silver

2021 ◽  
Vol 22 (1) ◽  
pp. 175-179
Author(s):  
I.M. Pazukha ◽  
D.O. Shuliarenko ◽  
S.R. Dolgov-Gordiichuk ◽  
L.V. Odnodvorets
Keyword(s):  
Magnetic Field ◽  
Experimental Investigation ◽  
Multilayer Film ◽  
Magnetic Moments ◽  
Ferromagnetic Material ◽  
Total Thickness ◽  
Antiferromagnetic Ordering ◽  
Structure Changes ◽  
Giant Magnetoresistive Effect ◽  
Magnetoresistive Effect

In this paper, the experimental investigation focuses on the magnetoresistive properties of nanosized film systems. Their structure changes from layered to granular due to transition from bilayer FM/NM (FM is a ferromagnetic material, NM is a nonmagnetic material) to [FM/NM]n multilayer film at a constant total thickness of samples. As ferromagnetic and nonmagnetic materials were chosen permalloy Ni80Fe20 (Py) and Ag, respectively. It was demonstrated that the shape of the field dependences of magnetoresistance depends on the number of bilayer Py/Ag. For as-deposited [Py/Ag]n/S at n = 8, 16, the transition from the antiferromagnetic ordering of magnetic moments to ferromagnetic one occurs under an external magnetic field. As a result, the resistivity of the samples reduced, and the giant magnetoresistive effect was realized. The increase of the number of bilayers repeats from 2 to 16 at the unchanged total thickness of the system leads to the growth of the magnetoresistance from 0.1 % to 0.35 %. During annealing up to 600 K, the magnetoresistive effect is reduced, but it does not disappear completely

scholarly journals Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5785
Author(s):  
Dmitry Zhukov ◽  
Vladimir Amelichev ◽  
Sergey Kasatkin ◽  
Dmitry Kostyuk
Keyword(s):  
Magnetron Sputtering ◽  
Silicon Wafer ◽  
Experimental Studies ◽  
Practical Application ◽  
Easy Magnetization ◽  
Mechanical Loads ◽  
Multilayer Nanostructures ◽  
Magnetic Layers ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

The article presents the results of experimental studies of multilayer nanostructures of magnetic straintronics formed by magnetron sputtering on a 100 mm silicon wafer. The object of the study is two types of nanostructures: Ta/FeNiCo/CoFe/Ta and Ta/FeNi/CoFe/Ta, differing in the ratio of magnetic layers. The magnetic and magnetoresistive characteristics of multilayer nanostructures under varying mechanical loads are studied both on a 100 mm wafer and in the form of 4 × 20 mm2 samples of two types. The first, where the axis of easy magnetization is directed along the long side of the sample, and the second, where the axis of easy magnetization is a tilt at 45°. Based on the obtained data, the conclusions about the practical application of these nanostructures in magnetic straintronics elements are drawn.

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