Analytical characterization of thin carbon films

2003 ◽  
Vol 375 (1) ◽  
pp. 47-52 ◽  
Author(s):  
R. Ohr ◽  
C. Schug ◽  
M. Wahl ◽  
A. Wienss ◽  
H. Hilgers ◽  
...  
2016 ◽  
Vol 19 (3) ◽  
pp. 669-672 ◽  
Author(s):  
Danilo Lopes Costa e Silva ◽  
Luciana Reyes Pires Kassab ◽  
Jose Roberto Martinelli ◽  
Antonio Domingues dos Santos ◽  
Sidney José Lima Ribeiro ◽  
...  

1998 ◽  
Vol 12 (10) ◽  
pp. 383-391
Author(s):  
K. P. Adhi ◽  
A. K. Sharma ◽  
S. S. Wagal ◽  
D. S. Joag ◽  
S. K. Kulkarni

Thin films deposited by rapidly quenching the energetic carbon species impinging onto polycrystalline nickel substrates were studied by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS), and field ion microscopy (FIM). XPS and EELS of the deposited films, when compared with those recorded for graphite and synthetic diamond, indicated the growth of diamond like carbon films and amorphic diamond (a-D) phase. Surface atomic arrangement in the film is observed by FIM which magnifies the surface ~105 to 106 times. Facetting, lack of graphitic ordering, stability of the image inspite of raising or lowering the voltage about the field evaporation voltage indicate that the field ion micrograph is that of a-D.


Author(s):  
Alexander Andronov ◽  
Ekaterina Budylina ◽  
Pavel Shkitun ◽  
Pavel Gabdullin ◽  
Nikolay Gnuchev ◽  
...  

2017 ◽  
Vol 59 (3) ◽  
pp. 613-619 ◽  
Author(s):  
T. S. Kartapova ◽  
O. R. Bakieva ◽  
V. L. Vorob’ev ◽  
A. A. Kolotov ◽  
O. M. Nemtsova ◽  
...  

1987 ◽  
Vol 98 ◽  
Author(s):  
Wen. L. Hsu ◽  
G. W. Foltz ◽  
F. A. Greulich ◽  
K. F. Mccarty ◽  
G. J. Thomas ◽  
...  

ABSTRACTThin carbon films of ˜ 600 Å have been deposited on Si <111> wafers by striking an RF discharge in gas mixtures of hydrogen and methane. The deposition rate increased with increasing methane fraction. The peak rate was ˜ 1 Å/sec at an applied power density of 0.4 W cm−2. The films, with an average density of 2.54 gm cm−3, are amorphous in nature but exhibit broad diffraction maxima corresponding to interatcidc spacings of 2.05Å and 1. 15Å. Measurements of hydrogen concentration in the films showed that the hydrogen at. % [H/(H+C)] increased from 30 to 40% as the hydrogen fraction in the feed gas increased. By using a D2-CH4, we were also able to deduce that hydrogen molecules can be a large source of hydrogen trapped in the films.


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