Recent developments in sensors for wearable device applications

Author(s):  
Yuemeng Cheng ◽  
Kan Wang ◽  
Hao Xu ◽  
Tangan Li ◽  
Qinghui Jin ◽  
...  
2021 ◽  
pp. 2100134
Author(s):  
Ruijie Tang ◽  
Xiaoxue Yao ◽  
Jingyi Chen ◽  
Sreepathy Sridar ◽  
Xianglei He ◽  
...  

2017 ◽  
Vol 157 ◽  
pp. 1801-1808 ◽  
Author(s):  
Pandiyarasan Veluswamy ◽  
Suhasini Sathiyamoorthy ◽  
Faizan Khan ◽  
Aranya Ghosh ◽  
Majumdar Abhijit ◽  
...  

1989 ◽  
Vol 175 ◽  
Author(s):  
R. Lytel ◽  
G.F. Lipscomb

AbstractRecent developments in the application of electro-optic polymer materials to perform multi-functional roles in integrated optic device applications are summarized and future requirements for practical field operation are discussed.


1998 ◽  
Vol 537 ◽  
Author(s):  
J. M. Zavadat ◽  
Myo Thaik ◽  
U. Hòmmerich ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
...  

AbstractThe III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 μm) and infrared (at ∼ 1.54 μm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 Pm have been measured.


Author(s):  
Wei-Jian Xu ◽  
Konstantin Romanyuk ◽  
Ying Zeng ◽  
Andrei Ushakov ◽  
Vladimir Shur ◽  
...  

The recent emergence of multiaxial molecular ferroelectrics opens up a new route toward technological evolution in the next-generation flexible/wearable device applications. However, a fundamental understanding of multiaxial ferroelectricity and polarization...


2006 ◽  
Vol 21 (11) ◽  
pp. 2758-2766 ◽  
Author(s):  
Kok Chung Chin ◽  
Amarsinh Gohel ◽  
Hendry Izaac Elim ◽  
Weizhe Chen ◽  
Wei Ji ◽  
...  

Carbon nanotubes have been shown to be effective broadband optical limiters for nanosecond laser pulses. In this paper, we review the recent developments of carbon nanotube-based optical limiters, in particular the effects of modifying carbon nanotubes for device applications. The techniques used to modify carbon nanotubes mainly include thin film coating, doping, and blending with optical absorbing dye. These modifications can greatly enhance the optical limiting performance of carbon nanotubes, with the goal of fabricating an optimal optical limiter system.


2015 ◽  
Vol 107 (20) ◽  
pp. 202901 ◽  
Author(s):  
Sung Sik Won ◽  
Mackenzie Sheldon ◽  
Nicholas Mostovych ◽  
Jiyeon Kwak ◽  
Bong-Suk Chang ◽  
...  

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