Local current–voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

2011 ◽  
Vol 104 (4) ◽  
pp. 1189-1194 ◽  
Author(s):  
R. H. Shin ◽  
W. Jo ◽  
D.-W. Kim ◽  
Jae Ho Yun ◽  
S. Ahn
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

2016 ◽  
Vol 858 ◽  
pp. 1137-1140 ◽  
Author(s):  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Salvatore di Franco ◽  
Raffaella Lo Nigro ◽  
Emanuela Schilirò ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Contact ◽  
Hot Electron ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current ◽  
High Frequency Device ◽  
Electron Transistors

This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a HET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Dogan ◽  
J. Spradlin ◽  
J. Xie ◽  
A. A. Pomarico ◽  
R. Cingolani ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Surface ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Topological Features ◽  
Atomic Force ◽  
Local Current ◽  
Semiconductor Junction ◽  
Surrounding Areas ◽  
Conduction Properties

AbstractThe current conduction in GaN is very topical and is the topic of a vast amount of research. By simultaneously mapping the topography and the current distribution, conductive atomic force microscopy (C-AFM) has the potential to establish a correlation between topological features and localized current paths. In this study, this technique was applied to image the conduction properties of as-grown and post-growth chemically etched samples GaN epitaxial layers on a microscopic scale. Our results show that prismatic planes have a significantly higher conductivity than the surrounding areas of the sample surface. A large and stable local current was mainly observed from the walls of the etched pits, under forward and reverse bias of the metallized AFM tip/semiconductor junction.

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