Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering

2017 ◽  
Vol 123 (10) ◽  
Author(s):  
Aritra Acharyya
Keyword(s):  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Charge Carriers ◽  
Impact Ionization Rate

Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN using a Wave Vector Dependent Numerical Transition Rate Formulation

1995 ◽  
Vol 395 ◽  
Author(s):  
J. Kolnik ◽  
I.H. Oguzman ◽  
K.F. Brennan ◽  
R. Wang ◽  
P.P. Ruden
Keyword(s):  
Monte Carlo ◽  
Transition Rate ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Golden Rule ◽  
Ionization Rate ◽  
Ensemble Monte Carlo ◽  
Bulk Gan ◽  
Impact Ionization Rate ◽  
The Impact

ABSTRACTIn this paper, we present ensemble Monte Carlo based calculations of electron initiated impact ionization in bulk zincblende GaN using a wavevector dependent formulation of the interband impact ionization transition rate. These are the first reported estimates, either theoretical or experimental, of the impact ionization rates in GaN. The transition rate is determined from Fermi’s golden rule for a two-body screened Coulomb interaction using a numerically determined dielectric function as well as by numerically integrating over all of the possible final states. The Monte Carlo simulator includes the full details of the first four conduction bands derived from an empirical pseudopotential calculation as well as all of the relevant phonon scattering mechanisms. It is found that the ionization rate has a relatively "soft" threshold.

Calculation of the electron and hole impact ionization rate for wurtzite AlN and GaN

2010 ◽  
Vol 25 (11) ◽  
pp. 115010 ◽  
Author(s):  
G R Li ◽  
Z X Qin ◽  
G F Luo ◽  
B Shen ◽  
G Y Zhang
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Impact Ionization Rate
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