Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal‐oxide‐semiconductor device characteristics and experimental results

1993 ◽  
Vol 74 (9) ◽  
pp. 5859-5866 ◽  
Author(s):  
Syunji Imanaga ◽  
Kunio Hane ◽  
Yoshinori Hayafuji
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Metal Oxide ◽  
Inverse Modeling ◽  
Impact Ionization ◽  
Semiconductor Device ◽  
Ionization Rate ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Impact Ionization Rate

Model of hole-initiated impact-ionization rate in α-quartz for a full band Monte Carlo simulation

2003 ◽  
Vol 94 (2) ◽  
pp. 1096-1104 ◽  
Author(s):  
Tatsuya Kunikiyo ◽  
Kiyoshi Ishikawa ◽  
Yasuo Inoue ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Full Band ◽  
Impact Ionization Rate

Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage

2011 ◽  
Vol 99 (8) ◽  
pp. 083507 ◽  
Author(s):  
Qianqian Huang ◽  
Ru Huang ◽  
Zhenhua Wang ◽  
Zhan Zhan ◽  
Yangyuan Wang
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Impact Ionization ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Operating Voltage

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

2006 ◽  
Vol 88 (15) ◽  
pp. 152101 ◽  
Author(s):  
D. Q. Kelly ◽  
I. Wiedmann ◽  
J. P. Donnelly ◽  
S. V. Joshi ◽  
S. Dey ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Applications

scholarly journals Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

2004 ◽  
Vol 85 (16) ◽  
pp. 3387-3389 ◽  
Author(s):  
J. M. Sun ◽  
W. Skorupa ◽  
T. Dekorsy ◽  
M. Helm ◽  
L. Rebohle ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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